Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition

Koji Matsubara, P. Fons, K. Iwata, A. Yamada, S. Niki

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Transparent and conductive Al-doped ZnO films have been deposited at room temperature by oxygen radical-assisted pulsed laser deposition. An average optical transmittance of more than 86% (0.7 μm film thickness) in the wavelength range 400-800 nm and resistivity as low as 5 × 10-4 Ω cm were obtained from films deposited using a radical oxygen source. The surface roughness of the ZnO films measured by means of atomic force microscopy was found to be below 1 nm, suggesting that soft deposition techniques with low kinetic energy sources can make possible the deposition of high-quality transparent conducting ZnO films, even at room temperature.

Original languageEnglish
Pages (from-to)176-179
Number of pages4
JournalThin Solid Films
Volume422
Issue number1-2
DOIs
Publication statusPublished - 2002 Dec 20
Externally publishedYes

Keywords

  • Pulsed laser deposition
  • Thin film
  • Transparent conductive oxide
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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