Room-temperature observation of size effects in photoluminescence of Si 0.8Ge 0.2/Si nanocolumns prepared by neutral beam etching

Rii Hirano, Satoru Miyamoto, Masahiro Yonemoto, Seiji Samukawa, Kentarou Sawano, Yasuhiro Shiraki, Kohei M Itoh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the room-temperature observation of clear size effects in photoluminescence of ensembles of SiGe/Si double-quantum-well nanocolumns. A silicon thin layer (~100 nm) containing two 3-nm-thick Si 0.8Ge 0.2 layers was etched into an ensemble of ~100nm tall nanocolumns standing vertically on the 200-nm-thick silicon-on-insulator layer. A clear shift of photoluminescence peak positions appearing at around 1.8 eV has been observed with varying average diameter of the nanocolumns between 18 and 24 nm.

Original languageEnglish
Article number082004
JournalApplied Physics Express
Volume5
Issue number8
DOIs
Publication statusPublished - 2012 Aug

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neutral beams
Etching
Photoluminescence
etching
photoluminescence
Silicon
room temperature
Semiconductor quantum wells
silicon
Temperature
insulators
quantum wells
shift

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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Room-temperature observation of size effects in photoluminescence of Si 0.8Ge 0.2/Si nanocolumns prepared by neutral beam etching. / Hirano, Rii; Miyamoto, Satoru; Yonemoto, Masahiro; Samukawa, Seiji; Sawano, Kentarou; Shiraki, Yasuhiro; Itoh, Kohei M.

In: Applied Physics Express, Vol. 5, No. 8, 082004, 08.2012.

Research output: Contribution to journalArticle

Hirano, Rii ; Miyamoto, Satoru ; Yonemoto, Masahiro ; Samukawa, Seiji ; Sawano, Kentarou ; Shiraki, Yasuhiro ; Itoh, Kohei M. / Room-temperature observation of size effects in photoluminescence of Si 0.8Ge 0.2/Si nanocolumns prepared by neutral beam etching. In: Applied Physics Express. 2012 ; Vol. 5, No. 8.
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