Abstract
The programmable multiple functionality operation of single elctron transistor (SET) logic having a nonvolatile memory function is suggested. The SETs which operate at room temprature and have nonvolatile memory function and highest peak-to-valley current ratio are fabricated. The nonvolatile memory function incorprated in SET circuit can be programmed from a converter/inverter to an inverter/converter.
| Original language | English |
|---|---|
| Pages (from-to) | 863-865 |
| Number of pages | 3 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 2000 Dec 1 |
| Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 2000 Dec 10 → 2000 Dec 13 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry