TY - GEN
T1 - Room-temperature photoluminescence observation of stacking faults in 3C-SiC
AU - Hirano, Rii
AU - Tajima, Michio
AU - Itoh, Kohei M.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SF C) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFC based on the broadening of the 2.3 eV peak.
AB - We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SF C) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFC based on the broadening of the 2.3 eV peak.
KW - 3C-SiC
KW - Epitaxial layer
KW - Photoluminescence
KW - Stacking faults
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U2 - 10.4028/www.scientific.net/MSF.645-648.355
DO - 10.4028/www.scientific.net/MSF.645-648.355
M3 - Conference contribution
AN - SCOPUS:77955464053
SN - 0878492798
SN - 9780878492794
T3 - Materials Science Forum
SP - 355
EP - 358
BT - Silicon Carbide and Related Materials 2009
PB - Trans Tech Publications Ltd
T2 - 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Y2 - 11 October 2009 through 16 October 2009
ER -