Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope

K. Matsuda; T. Saiki; H. Saito; K. Nishi

doi:10.1063/1.125660

Room-temperature photoluminescence spectroscopy of self-assembled In_0.5Ga_0.5As single quantum dots by using highly sensitive near-field scanning optical microscope

K. Matsuda, T. Saiki, H. Saito, K. Nishi

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

We have studied the optical properties of self-assembled In_0.5Ga_0.5As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by using a double-tapered fiber probe having the advantages of both high collection efficiency and high spatial resolution. Through the precise examination of PL spectra of many QDs, including broadening and saturation behaviors, the homogeneous linewidth of the ground state emission is evaluated as from 9.8 to 14.5 meV.

Original language	English
Pages (from-to)	73-75
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	1
DOIs	https://doi.org/10.1063/1.125660
Publication status	Published - 2000 Jan 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125660

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abstract = "We have studied the optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by using a double-tapered fiber probe having the advantages of both high collection efficiency and high spatial resolution. Through the precise examination of PL spectra of many QDs, including broadening and saturation behaviors, the homogeneous linewidth of the ground state emission is evaluated as from 9.8 to 14.5 meV.",

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AU - Nishi, K.

PY - 2000/1/3

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N2 - We have studied the optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by using a double-tapered fiber probe having the advantages of both high collection efficiency and high spatial resolution. Through the precise examination of PL spectra of many QDs, including broadening and saturation behaviors, the homogeneous linewidth of the ground state emission is evaluated as from 9.8 to 14.5 meV.

AB - We have studied the optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by using a double-tapered fiber probe having the advantages of both high collection efficiency and high spatial resolution. Through the precise examination of PL spectra of many QDs, including broadening and saturation behaviors, the homogeneous linewidth of the ground state emission is evaluated as from 9.8 to 14.5 meV.

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Room-temperature photoluminescence spectroscopy of self-assembled In_0.5Ga_0.5As single quantum dots by using highly sensitive near-field scanning optical microscope

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