Room temperature polariton photoluminescence in a two-dimensional array of inorganic-organic hybrid-type quantum-wells

Junko Ishi-Hayase, Teruya Ishihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoluminescence (PL) properties of polaritons at room temperature were investigated in a two-dimensional array of inorganic-organic hybrid-type semiconductor quantum-wells. In angularly-resolved PL spectra, PL peaks attributed to the lower branch of polariton shift with a detection angle and show a great change of its intensities. The central energy of PL peak at a certain detection angle is connected by the dispersion relation of the polariton, which is much different from polaritons in a bulk semiconductor. PL intensity of polariton is significantly enhanced at a half of Rabi splitting energy lower than exciton resonant energy due to the polariton bottleneck effect. PL intensity around Γ point is found to be strongly modulated depending on material parameters of the samples.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1073-1074
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Ishi-Hayase, J., & Ishihara, T. (2005). Room temperature polariton photoluminescence in a two-dimensional array of inorganic-organic hybrid-type quantum-wells. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1073-1074). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994483