TY - GEN
T1 - Room temperature polariton photoluminescence in a two-dimensional array of inorganic-organic hybrid-type quantum-wells
AU - Ishi-Hayase, Junko
AU - Ishihara, Teruya
PY - 2005/6/30
Y1 - 2005/6/30
N2 - Photoluminescence (PL) properties of polaritons at room temperature were investigated in a two-dimensional array of inorganic-organic hybrid-type semiconductor quantum-wells. In angularly-resolved PL spectra, PL peaks attributed to the lower branch of polariton shift with a detection angle and show a great change of its intensities. The central energy of PL peak at a certain detection angle is connected by the dispersion relation of the polariton, which is much different from polaritons in a bulk semiconductor. PL intensity of polariton is significantly enhanced at a half of Rabi splitting energy lower than exciton resonant energy due to the polariton bottleneck effect. PL intensity around Γ point is found to be strongly modulated depending on material parameters of the samples.
AB - Photoluminescence (PL) properties of polaritons at room temperature were investigated in a two-dimensional array of inorganic-organic hybrid-type semiconductor quantum-wells. In angularly-resolved PL spectra, PL peaks attributed to the lower branch of polariton shift with a detection angle and show a great change of its intensities. The central energy of PL peak at a certain detection angle is connected by the dispersion relation of the polariton, which is much different from polaritons in a bulk semiconductor. PL intensity of polariton is significantly enhanced at a half of Rabi splitting energy lower than exciton resonant energy due to the polariton bottleneck effect. PL intensity around Γ point is found to be strongly modulated depending on material parameters of the samples.
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U2 - 10.1063/1.1994483
DO - 10.1063/1.1994483
M3 - Conference contribution
AN - SCOPUS:33749502778
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 1073
EP - 1074
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -