The drift mobility, carrier density and conductivity of the two-dimensional electron gas (2DEG) confined in the tensilely strained 15nm Si quantum well (QW) of SiGe heterostructures were obtained by mobility spectrum analysis at room-temperature. The highest 2DEG drift mobility of 2900 cm2V -1 s-1 with carrier density of 1 × 1011 cm-2 were observed in the Si QW with -0.9% tensile strain. However, the increase of strain up to -1.08% resulted in the decline of 2DEG drift mobility down to 2670cm2V-1 s-1 and the pronounced increase of carrier density up to 4.4 × 1011 cm -2. Nevertheless, the pronounced enhancement of 2DEG conductivity was observed.
ASJC Scopus subject areas
- Physics and Astronomy(all)