Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well

Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, Yasuhiro Shiraki

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The drift mobility, carrier density and conductivity of the two-dimensional electron gas (2DEG) confined in the tensilely strained 15nm Si quantum well (QW) of SiGe heterostructures were obtained by mobility spectrum analysis at room-temperature. The highest 2DEG drift mobility of 2900 cm2V -1 s-1 with carrier density of 1 × 1011 cm-2 were observed in the Si QW with -0.9% tensile strain. However, the increase of strain up to -1.08% resulted in the decline of 2DEG drift mobility down to 2670cm2V-1 s-1 and the pronounced increase of carrier density up to 4.4 × 1011 cm -2. Nevertheless, the pronounced enhancement of 2DEG conductivity was observed.

Original languageEnglish
Article number021402
JournalApplied Physics Express
Issue number2
Publication statusPublished - 2008 Feb 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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