Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well

Maksym Myronov, Kentarou Sawano, Kohei M Itoh, Yasuhiro Shiraki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The drift mobility, carrier density and conductivity of the two-dimensional electron gas (2DEG) confined in the tensilely strained 15nm Si quantum well (QW) of SiGe heterostructures were obtained by mobility spectrum analysis at room-temperature. The highest 2DEG drift mobility of 2900 cm2V -1 s-1 with carrier density of 1 × 1011 cm-2 were observed in the Si QW with -0.9% tensile strain. However, the increase of strain up to -1.08% resulted in the decline of 2DEG drift mobility down to 2670cm2V-1 s-1 and the pronounced increase of carrier density up to 4.4 × 1011 cm -2. Nevertheless, the pronounced enhancement of 2DEG conductivity was observed.

Original languageEnglish
Article number021402
JournalApplied Physics Express
Volume1
Issue number2
DOIs
Publication statusPublished - 2008 Feb

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Two dimensional electron gas
Transport properties
Semiconductor quantum wells
electron gas
transport properties
quantum wells
Carrier concentration
room temperature
conductivity
Temperature
Tensile strain
spectrum analysis
Spectrum analysis
Heterojunctions
augmentation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well. / Myronov, Maksym; Sawano, Kentarou; Itoh, Kohei M; Shiraki, Yasuhiro.

In: Applied Physics Express, Vol. 1, No. 2, 021402, 02.2008.

Research output: Contribution to journalArticle

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