A new method, named saturated photocurrent, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method we can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1983|
ASJC Scopus subject areas
- Physics and Astronomy(all)