Saturated photocurrent method for measurement of the optical-absorption coefficient in a semiconductor

T. Shimizu; K. Takeda; H. Yanagawa; E. Ohta; M. Sakata

doi:10.1063/1.332521

Saturated photocurrent method for measurement of the optical-absorption coefficient in a semiconductor

T. Shimizu, K. Takeda, H. Yanagawa, E. Ohta, M. Sakata

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A new method, named saturated photocurrent, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method we can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.

Original language	English
Pages (from-to)	4218-4220
Number of pages	3
Journal	Journal of Applied Physics
Volume	54
Issue number	7
DOIs	https://doi.org/10.1063/1.332521
Publication status	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.332521

Cite this

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title = "Saturated photocurrent method for measurement of the optical-absorption coefficient in a semiconductor",

abstract = "A new method, named saturated photocurrent, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method we can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.",

author = "T. Shimizu and K. Takeda and H. Yanagawa and E. Ohta and M. Sakata",

year = "1983",

doi = "10.1063/1.332521",

language = "English",

volume = "54",

pages = "4218--4220",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Saturated photocurrent method for measurement of the optical-absorption coefficient in a semiconductor

AU - Shimizu, T.

AU - Takeda, K.

AU - Yanagawa, H.

AU - Ohta, E.

AU - Sakata, M.

PY - 1983

Y1 - 1983

N2 - A new method, named saturated photocurrent, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method we can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.

AB - A new method, named saturated photocurrent, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method we can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.

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DO - 10.1063/1.332521

M3 - Article

AN - SCOPUS:0020781483

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EP - 4220

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Saturated photocurrent method for measurement of the optical-absorption coefficient in a semiconductor

Abstract

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