SATURATED PHOTOCURRENT METHOD FOR MEASURMENT OF THE OPTICAL-ABSORPTION COEFFICIENT IN A SEMICONDUCTOR.

T. Shimizu, K. Takeda, H. Yanagawa, E. Ohta, M. Sakata

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new method, called the saturated photocurrent method, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method one can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.

Original languageEnglish
Pages (from-to)4218-4220
Number of pages3
JournalJournal of Applied Physics
Volume54
Issue number7
DOIs
Publication statusPublished - 1983 Jul

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photocurrents
absorptivity
optical absorption
solar cells
oxides
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

SATURATED PHOTOCURRENT METHOD FOR MEASURMENT OF THE OPTICAL-ABSORPTION COEFFICIENT IN A SEMICONDUCTOR. / Shimizu, T.; Takeda, K.; Yanagawa, H.; Ohta, E.; Sakata, M.

In: Journal of Applied Physics, Vol. 54, No. 7, 07.1983, p. 4218-4220.

Research output: Contribution to journalArticle

Shimizu, T. ; Takeda, K. ; Yanagawa, H. ; Ohta, E. ; Sakata, M. / SATURATED PHOTOCURRENT METHOD FOR MEASURMENT OF THE OPTICAL-ABSORPTION COEFFICIENT IN A SEMICONDUCTOR. In: Journal of Applied Physics. 1983 ; Vol. 54, No. 7. pp. 4218-4220.
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