Scaling analysis of nanoelectromechanical memory devices

Tasuku Nagami, Yoshishige Tsuchiya, Ken Uchida, Hiroshi Mizuta, Shunri Oda

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Numerical simulation of electromechanical switching for bistable bridges in non-volatile nanoelectromechanical (NEM) memory devices suggests that performance of memory characteristics enhanced by decreasing suspended floating gate length. By conducting a two-dimensional finite element electromechanical simulation combined with a drift-diffusion analysis, we analyze the electromechanical switching operation of miniaturized structures. By shrinking the NEM floating gate length from 1000 to 100 nm, the switching (set/reset) voltage reduces from 7.2 to 2.8 V, switching time from 63 to 4.6 ns, power consumption from 16.9 to 0.13 fJ. This indicates the advantage of fast and low-power memory characteristics.

Original languageEnglish
Pages (from-to)443041-443045
Number of pages5
JournalJapanese Journal of Applied Physics
Volume49
Issue number4 PART 1
DOIs
Publication statusPublished - 2010 Apr
Externally publishedYes

Fingerprint

scaling
Data storage equipment
floating
Electric power utilization
simulation
conduction
Computer simulation
Electric potential
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Nagami, T., Tsuchiya, Y., Uchida, K., Mizuta, H., & Oda, S. (2010). Scaling analysis of nanoelectromechanical memory devices. Japanese Journal of Applied Physics, 49(4 PART 1), 443041-443045. https://doi.org/10.1143/JJAP.49.044304

Scaling analysis of nanoelectromechanical memory devices. / Nagami, Tasuku; Tsuchiya, Yoshishige; Uchida, Ken; Mizuta, Hiroshi; Oda, Shunri.

In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 1, 04.2010, p. 443041-443045.

Research output: Contribution to journalArticle

Nagami, T, Tsuchiya, Y, Uchida, K, Mizuta, H & Oda, S 2010, 'Scaling analysis of nanoelectromechanical memory devices', Japanese Journal of Applied Physics, vol. 49, no. 4 PART 1, pp. 443041-443045. https://doi.org/10.1143/JJAP.49.044304
Nagami T, Tsuchiya Y, Uchida K, Mizuta H, Oda S. Scaling analysis of nanoelectromechanical memory devices. Japanese Journal of Applied Physics. 2010 Apr;49(4 PART 1):443041-443045. https://doi.org/10.1143/JJAP.49.044304
Nagami, Tasuku ; Tsuchiya, Yoshishige ; Uchida, Ken ; Mizuta, Hiroshi ; Oda, Shunri. / Scaling analysis of nanoelectromechanical memory devices. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 4 PART 1. pp. 443041-443045.
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