Scaling analysis of nanoelectromechanical memory devices

Tasuku Nagami, Yoshishige Tsuchiya, Ken Uchida, Hiroshi Mizuta, Shunri Oda

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Numerical simulation of electromechanical switching for bistable bridges in non-volatile nanoelectromechanical (NEM) memory devices suggests that performance of memory characteristics enhanced by decreasing suspended floating gate length. By conducting a two-dimensional finite element electromechanical simulation combined with a drift-diffusion analysis, we analyze the electromechanical switching operation of miniaturized structures. By shrinking the NEM floating gate length from 1000 to 100 nm, the switching (set/reset) voltage reduces from 7.2 to 2.8 V, switching time from 63 to 4.6 ns, power consumption from 16.9 to 0.13 fJ. This indicates the advantage of fast and low-power memory characteristics.

Original languageEnglish
Pages (from-to)443041-443045
Number of pages5
JournalJapanese journal of applied physics
Issue number4 PART 1
Publication statusPublished - 2010 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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