Scaling analysis of the low temperature conductivity in neutron-transmutation-doped 70Ge: Ga

Kohei M Itoh, M. Watanabe, Y. Ootuka, E. E. Haller

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Abstract

We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.

Original languageEnglish
Pages (from-to)631-637
Number of pages7
JournalAnnalen der Physik (Leipzig)
Volume8
Issue number7
DOIs
Publication statusPublished - 1999

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nuclear reactions
scaling
conductivity
coverings
transport properties
insulators
exponents
temperature
curves
metals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Scaling analysis of the low temperature conductivity in neutron-transmutation-doped 70Ge : Ga. / Itoh, Kohei M; Watanabe, M.; Ootuka, Y.; Haller, E. E.

In: Annalen der Physik (Leipzig), Vol. 8, No. 7, 1999, p. 631-637.

Research output: Contribution to journalArticle

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abstract = "We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4{\%} or N = Nc ± 40{\%}, is necessary in the future for the reliable determination of μ in Ge:Ga.",
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N2 - We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.

AB - We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.

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