Abstract
We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.
| Original language | English |
|---|---|
| Pages (from-to) | 631-637 |
| Number of pages | 7 |
| Journal | Annalen der Physik (Leipzig) |
| Volume | 8 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1999 |
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Scaling analysis of the low temperature conductivity in neutron-transmutation-doped 70Ge : Ga. / Itoh, Kohei M; Watanabe, M.; Ootuka, Y.; Haller, E. E.
In: Annalen der Physik (Leipzig), Vol. 8, No. 7, 1999, p. 631-637.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Scaling analysis of the low temperature conductivity in neutron-transmutation-doped 70Ge
T2 - Ga
AU - Itoh, Kohei M
AU - Watanabe, M.
AU - Ootuka, Y.
AU - Haller, E. E.
PY - 1999
Y1 - 1999
N2 - We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.
AB - We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033352492&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3889(199911)8:7/9<631::AID-ANDP631>3.0.CO;2-6
DO - 10.1002/(SICI)1521-3889(199911)8:7/9<631::AID-ANDP631>3.0.CO;2-6
M3 - Article
AN - SCOPUS:0033352492
VL - 8
SP - 631
EP - 637
JO - Annalen der Physik
JF - Annalen der Physik
SN - 0003-3804
IS - 7
ER -