Scanning tunneling microscopy image of transition-metal-dichalcogenide surfaces

Katsuyoshi Kobayashi, Jun Yamauchi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) images of transition-metal-dichalcogenide (TMD) surfaces are studied theoretically. First, STM images of the MoS2 surface are calculated by the first-principles method with a plane-wave basis, where it has not been settled whether the first or second layer is observed in STM. It is determined theoretically that the bright spots observed in the experimental STM images correspond to the S atoms of the outermost layer. Second, the superstructures observed in the STM images of the heteroepitaxial TMDs such as the MoSe2/MoS2 surface are investigated. It is found that the effect of the atomic displacement is an important factor in explaining the features of the superstructures.

Original languageEnglish
Pages (from-to)317-321
Number of pages5
JournalSurface Science
Volume357-358
DOIs
Publication statusPublished - 1996 Jun 20
Externally publishedYes

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Keywords

  • Density functional calculations
  • Molybdenum
  • Scanning tunneling microscopy
  • Semiconducting surfaces
  • Sulphides
  • Surface electronic phenomena
  • Tunneling

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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