Abstract
This paper describes the critical importance of interfacial strength between copper lines and cap layer for catastrophic failure due to chip-package interaction (CPI). Recently, copper interconnects and insulating layers are stacked alternately in semiconductor devices. Especially, copper/low-k structures are widely selected. However, the low-k materials have weak mechanical properties, which sometimes induces reliability issues, especially, chip package interactions. In our previous works, the interfacial strength of Cu/Cap has been successfully measured on the sub-micron scale. In this paper, based on the measured results, we try to simulate the initiation and propagation of failure in interconnect structures and discuss the scenario for catastrophic failure under CPI.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Reliability Physics Symposium Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 5C31-5C35 |
| Volume | 2015-May |
| ISBN (Print) | 9781467373623 |
| DOIs | |
| Publication status | Published - 2015 May 26 |
| Event | IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: 2015 Apr 19 → 2015 Apr 23 |
Other
| Other | IEEE International Reliability Physics Symposium, IRPS 2015 |
|---|---|
| Country | United States |
| City | Monterey |
| Period | 15/4/19 → 15/4/23 |
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Keywords
- chip-package interaction
- copper line
- crack
- interfacial strength
- low-k
- numerical simulation
ASJC Scopus subject areas
- Engineering(all)
Cite this
Scenario for catastrophic failure in interconnect structures under chip package interaction. / Omiya, Masaki; Kamiya, Shoji; Shishido, Nobuyuki; Koiwa, Kozo; Sato, Hisashi; Nishida, Masahiro; Suzuki, Takashi; Nakamura, Tomoji; Suzuki, Toshiaki; Nokuo, Takeshi.
IEEE International Reliability Physics Symposium Proceedings. Vol. 2015-May Institute of Electrical and Electronics Engineers Inc., 2015. p. 5C31-5C35 7112751.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Scenario for catastrophic failure in interconnect structures under chip package interaction
AU - Omiya, Masaki
AU - Kamiya, Shoji
AU - Shishido, Nobuyuki
AU - Koiwa, Kozo
AU - Sato, Hisashi
AU - Nishida, Masahiro
AU - Suzuki, Takashi
AU - Nakamura, Tomoji
AU - Suzuki, Toshiaki
AU - Nokuo, Takeshi
PY - 2015/5/26
Y1 - 2015/5/26
N2 - This paper describes the critical importance of interfacial strength between copper lines and cap layer for catastrophic failure due to chip-package interaction (CPI). Recently, copper interconnects and insulating layers are stacked alternately in semiconductor devices. Especially, copper/low-k structures are widely selected. However, the low-k materials have weak mechanical properties, which sometimes induces reliability issues, especially, chip package interactions. In our previous works, the interfacial strength of Cu/Cap has been successfully measured on the sub-micron scale. In this paper, based on the measured results, we try to simulate the initiation and propagation of failure in interconnect structures and discuss the scenario for catastrophic failure under CPI.
AB - This paper describes the critical importance of interfacial strength between copper lines and cap layer for catastrophic failure due to chip-package interaction (CPI). Recently, copper interconnects and insulating layers are stacked alternately in semiconductor devices. Especially, copper/low-k structures are widely selected. However, the low-k materials have weak mechanical properties, which sometimes induces reliability issues, especially, chip package interactions. In our previous works, the interfacial strength of Cu/Cap has been successfully measured on the sub-micron scale. In this paper, based on the measured results, we try to simulate the initiation and propagation of failure in interconnect structures and discuss the scenario for catastrophic failure under CPI.
KW - chip-package interaction
KW - copper line
KW - crack
KW - interfacial strength
KW - low-k
KW - numerical simulation
UR - http://www.scopus.com/inward/record.url?scp=84942885613&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942885613&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2015.7112751
DO - 10.1109/IRPS.2015.7112751
M3 - Conference contribution
AN - SCOPUS:84942885613
SN - 9781467373623
VL - 2015-May
SP - 5C31-5C35
BT - IEEE International Reliability Physics Symposium Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -