Second-harmonic generation from CuInSe2 thin films: Influence of the substrate-epilayer lattice mismatch

D. J. Bottomley; A. Mito; P. J. Fons; S. Niki; A. Yamada

doi:10.1109/3.605550

Second-harmonic generation from CuInSe₂ thin films: Influence of the substrate-epilayer lattice mismatch

D. J. Bottomley, A. Mito, P. J. Fons, S. Niki, A. Yamada

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigate the second-order nonlinear optical (NLO) properties of tetragonal chalcopyrite-structure CuInSe₂ thin films using optical second-harmonic generation at a fundamental wavelength of 790 nm. An approximate doubling of the second-order optical nonlinearity of the CuInSe₂ thin films is achieved through changing the substrate from GaAs(001) to In_0.29Ga_0.71As(001), thereby reducing the lattice mismatch from 2.2% to 0.2%. This observation suggests that minimizing the lattice mismatch is a key requirement for the growth of high-quality NLO active chalcopyrite structure thin films and is in contrast to some other NLO active thin-film systems.

Original language	English
Pages (from-to)	1294-1298
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	33
Issue number	8
DOIs	https://doi.org/10.1109/3.605550
Publication status	Published - 1997 Aug
Externally published	Yes

Keywords

Birefringence
Nonlinear optics
Phase matching
Semiconductor defects
Semiconductor materials
Semiconductor waveguides
Thin films
X-ray measurements

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Second-harmonic generation from CuInSe2 thin films: Influence of the substrate-epilayer lattice mismatch",

abstract = "We investigate the second-order nonlinear optical (NLO) properties of tetragonal chalcopyrite-structure CuInSe2 thin films using optical second-harmonic generation at a fundamental wavelength of 790 nm. An approximate doubling of the second-order optical nonlinearity of the CuInSe2 thin films is achieved through changing the substrate from GaAs(001) to In0.29Ga0.71As(001), thereby reducing the lattice mismatch from 2.2% to 0.2%. This observation suggests that minimizing the lattice mismatch is a key requirement for the growth of high-quality NLO active chalcopyrite structure thin films and is in contrast to some other NLO active thin-film systems.",

keywords = "Birefringence, Nonlinear optics, Phase matching, Semiconductor defects, Semiconductor materials, Semiconductor waveguides, Thin films, X-ray measurements",

author = "Bottomley, {D. J.} and A. Mito and Fons, {P. J.} and S. Niki and A. Yamada",

note = "Funding Information: Manuscript received September 16, 1996; revised April 17, 1997. The work of D. J. Bottomley was supported by a Japanese Science and Technology Agency Fellowship. D. J. Bottomley was with the Electrotechnical Laboratory, Ibaraki-ken, Japan 305. He is now with the Research Institute for Electrical Communication, Tohoku University, Sendai 980-77, Japan. A. Mito is with the National Research Laboratory of Metrology, Ibaraki-ken, Japan 305. P. J. Fons, S. Niki, and A. Yamada are with the Electrotechnical Laboratory, Ibaraki-ken, Japan 305. Publisher Item Identifier S 0018-9197(97)05445-6.",

year = "1997",

month = aug,

doi = "10.1109/3.605550",

language = "English",

volume = "33",

pages = "1294--1298",

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T2 - Influence of the substrate-epilayer lattice mismatch

AU - Bottomley, D. J.

AU - Mito, A.

AU - Fons, P. J.

AU - Niki, S.

AU - Yamada, A.

N1 - Funding Information: Manuscript received September 16, 1996; revised April 17, 1997. The work of D. J. Bottomley was supported by a Japanese Science and Technology Agency Fellowship. D. J. Bottomley was with the Electrotechnical Laboratory, Ibaraki-ken, Japan 305. He is now with the Research Institute for Electrical Communication, Tohoku University, Sendai 980-77, Japan. A. Mito is with the National Research Laboratory of Metrology, Ibaraki-ken, Japan 305. P. J. Fons, S. Niki, and A. Yamada are with the Electrotechnical Laboratory, Ibaraki-ken, Japan 305. Publisher Item Identifier S 0018-9197(97)05445-6.

PY - 1997/8

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N2 - We investigate the second-order nonlinear optical (NLO) properties of tetragonal chalcopyrite-structure CuInSe2 thin films using optical second-harmonic generation at a fundamental wavelength of 790 nm. An approximate doubling of the second-order optical nonlinearity of the CuInSe2 thin films is achieved through changing the substrate from GaAs(001) to In0.29Ga0.71As(001), thereby reducing the lattice mismatch from 2.2% to 0.2%. This observation suggests that minimizing the lattice mismatch is a key requirement for the growth of high-quality NLO active chalcopyrite structure thin films and is in contrast to some other NLO active thin-film systems.

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KW - Nonlinear optics

KW - Phase matching

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KW - Semiconductor waveguides

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KW - X-ray measurements

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