Selective generation of quantum beats of weakly confined excitons

O. Kojima, T. Isu, J. Ishi-Hayase, M. Sasaki, M. Tsuchiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report the selective generation of quantum beats of weakly confined excitons in GaAs thin films. The oscillatory structure is observed in the degenerate four-wave-mixing (DFWM) signals, and the frequency varies with excitation energy. Comparing with the DFWM spectrum, we concluded that the origin of the oscillation is the quantum beat of the weakly confined excitons. Our results indicate the frequency selectivity of the excitonic quantum beats.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages457-458
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

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Keywords

  • GaAs
  • Quantum beat
  • Thin film
  • Weakly confined exciton

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kojima, O., Isu, T., Ishi-Hayase, J., Sasaki, M., & Tsuchiya, M. (2007). Selective generation of quantum beats of weakly confined excitons. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 457-458). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2729963