Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics

S. Koshiba, S. Watanabe, Y. Nakamura, M. Yamauchi, M. Yoshita, M. Baba, H. Akiyama, H. Sakaki

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures (Ts), and introduction of growth interruptions. Stimulated emission from these ridge QWR laser structures was observed at temperatures 4.7-290 K by optical pumping.

Original languageEnglish
Pages (from-to)810-813
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
Externally publishedYes
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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