Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics

S. Koshiba, S. Watanabe, Y. Nakamura, M. Yamauchi, M. Yoshita, M. Baba, H. Akiyama, H. Sakaki

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds