Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

K. Matsuyama; N. Murashima; M. Higashidani; Y. Nozaki

doi:10.1109/20.908584

Selective writing of sub-μm² domain in spin valve strip with current coincident scheme

K. Matsuyama, N. Murashima, M. Higashidani, Y. Nozaki

Research output: Contribution to journal › Conference article

Abstract

Cooperative nucleation of sub-μm² domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current I_w markedly increases with the additional assist current I_a. Threshold value of I_w required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of I_a with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between I_w and I_a becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm² region.

Original language	English
Pages (from-to)	2767-2769
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	36
Issue number	5 I
DOIs	https://doi.org/10.1109/20.908584
Publication status	Published - 2000 Sep 1
Externally published	Yes
Event	2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada Duration: 2000 Apr 9 → 2000 Apr 12

Keywords

EB lithography
Magnetic domain
Magnetic random access memory
Magnetization reversal
Spin valve

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Matsuyama, K., Murashima, N., Higashidani, M., & Nozaki, Y. (2000). Selective writing of sub-μm² domain in spin valve strip with current coincident scheme. IEEE Transactions on Magnetics, 36(5 I), 2767-2769. https://doi.org/10.1109/20.908584

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title = "Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme",

abstract = "Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.",

keywords = "EB lithography, Magnetic domain, Magnetic random access memory, Magnetization reversal, Spin valve",

author = "K. Matsuyama and N. Murashima and M. Higashidani and Y. Nozaki",

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doi = "10.1109/20.908584",

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T1 - Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

AU - Matsuyama, K.

AU - Murashima, N.

AU - Higashidani, M.

AU - Nozaki, Y.

PY - 2000/9/1

Y1 - 2000/9/1

N2 - Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

AB - Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

KW - EB lithography

KW - Magnetic domain

KW - Magnetic random access memory

KW - Magnetization reversal

KW - Spin valve

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