Abstract
Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.
| Original language | English |
|---|---|
| Pages (from-to) | 2767-2769 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 36 |
| Issue number | 5 I |
| DOIs | |
| Publication status | Published - 2000 Sep |
| Externally published | Yes |
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Keywords
- EB lithography
- Magnetic domain
- Magnetic random access memory
- Magnetization reversal
- Spin valve
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme. / Matsuyama, K.; Murashima, N.; Higashidani, M.; Nozaki, Yukio.
In: IEEE Transactions on Magnetics, Vol. 36, No. 5 I, 09.2000, p. 2767-2769.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme
AU - Matsuyama, K.
AU - Murashima, N.
AU - Higashidani, M.
AU - Nozaki, Yukio
PY - 2000/9
Y1 - 2000/9
N2 - Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.
AB - Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.
KW - EB lithography
KW - Magnetic domain
KW - Magnetic random access memory
KW - Magnetization reversal
KW - Spin valve
UR - http://www.scopus.com/inward/record.url?scp=0034260509&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034260509&partnerID=8YFLogxK
U2 - 10.1109/20.908584
DO - 10.1109/20.908584
M3 - Article
AN - SCOPUS:0034260509
VL - 36
SP - 2767
EP - 2769
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 5 I
ER -