Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

K. Matsuyama, N. Murashima, M. Higashidani, Yukio Nozaki

Research output: Contribution to journalArticle

Abstract

Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

Original languageEnglish
Pages (from-to)2767-2769
Number of pages3
JournalIEEE Transactions on Magnetics
Volume36
Issue number5 I
DOIs
Publication statusPublished - 2000 Sep
Externally publishedYes

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strip
Nucleation
Induced currents
conductors
nucleation
Relaxation time
Magnetization
threshold currents
pulse duration
relaxation time
magnetization

Keywords

  • EB lithography
  • Magnetic domain
  • Magnetic random access memory
  • Magnetization reversal
  • Spin valve

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme. / Matsuyama, K.; Murashima, N.; Higashidani, M.; Nozaki, Yukio.

In: IEEE Transactions on Magnetics, Vol. 36, No. 5 I, 09.2000, p. 2767-2769.

Research output: Contribution to journalArticle

Matsuyama, K. ; Murashima, N. ; Higashidani, M. ; Nozaki, Yukio. / Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme. In: IEEE Transactions on Magnetics. 2000 ; Vol. 36, No. 5 I. pp. 2767-2769.
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