Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface

Takeharu Sekiguchi, Shunji Yoshida, Kohei M Itoh

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter ∼2nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300°C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.

Original languageEnglish
Article number106101
JournalPhysical Review Letters
Volume95
Issue number10
DOIs
Publication statusPublished - 2005 Sep 2

Fingerprint

self assembly
wire
quantum computers
silicon
atomic structure
scanning tunneling microscopy
periodic variations
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface. / Sekiguchi, Takeharu; Yoshida, Shunji; Itoh, Kohei M.

In: Physical Review Letters, Vol. 95, No. 10, 106101, 02.09.2005.

Research output: Contribution to journalArticle

@article{b50a5b18717546c3ad295afa91764c9a,
title = "Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface",
abstract = "Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter ∼2nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300°C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.",
author = "Takeharu Sekiguchi and Shunji Yoshida and Itoh, {Kohei M}",
year = "2005",
month = "9",
day = "2",
doi = "10.1103/PhysRevLett.95.106101",
language = "English",
volume = "95",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "10",

}

TY - JOUR

T1 - Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface

AU - Sekiguchi, Takeharu

AU - Yoshida, Shunji

AU - Itoh, Kohei M

PY - 2005/9/2

Y1 - 2005/9/2

N2 - Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter ∼2nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300°C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.

AB - Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter ∼2nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300°C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.

UR - http://www.scopus.com/inward/record.url?scp=27144556955&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27144556955&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.95.106101

DO - 10.1103/PhysRevLett.95.106101

M3 - Article

VL - 95

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 10

M1 - 106101

ER -