Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface

Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh

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Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter ∼2nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300°C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.

Original languageEnglish
Article number106101
JournalPhysical review letters
Issue number10
Publication statusPublished - 2005 Sep 2


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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