Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111)

Takeharu Sekiguchi, Shunji Yoshida, Yohei Shiren, Kohei M Itoh, Josef Mysliveček, Bert Voigtländer

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The very initial stage of the molecular beam epitaxy of Si and Ge on Si (111) -7×7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy. The atomically straight steps have been prepared on a miscut Si(111) substrate by annealing at 830 °C with kink-up direct current. The length of the steps can be maximized by selecting a proper annealing time. The steps have a well-defined U (2, 0) step-edge structure. The growth of both Si and Ge at temperatures between 250 and 400 °C starts with formation of a single-adatom-row nanowire (0.67 nm in width) along the lower edge of each U (2, 0) step. Subsequent growth of Si and Ge at temperatures between 250 and 300 °C results in formation of one-dimensional arrays of nanoclusters (less than 2.0 nm in width) in the unfaulted halves of the 7×7 structure along the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. Differences between the growth of Si and Ge nanoclusters are discussed.

Original languageEnglish
Article number081702
JournalJournal of Applied Physics
Volume101
Issue number8
DOIs
Publication statusPublished - 2007

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nanoclusters
self assembly
annealing
spectroscopy
adatoms
scanning tunneling microscopy
nanowires
molecular beam epitaxy
direct current
scanning
temperature
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111). / Sekiguchi, Takeharu; Yoshida, Shunji; Shiren, Yohei; Itoh, Kohei M; Mysliveček, Josef; Voigtländer, Bert.

In: Journal of Applied Physics, Vol. 101, No. 8, 081702, 2007.

Research output: Contribution to journalArticle

Sekiguchi, Takeharu ; Yoshida, Shunji ; Shiren, Yohei ; Itoh, Kohei M ; Mysliveček, Josef ; Voigtländer, Bert. / Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111). In: Journal of Applied Physics. 2007 ; Vol. 101, No. 8.
@article{1d921b06b21d4df19281cc7cbe705f4e,
title = "Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111)",
abstract = "The very initial stage of the molecular beam epitaxy of Si and Ge on Si (111) -7×7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy. The atomically straight steps have been prepared on a miscut Si(111) substrate by annealing at 830 °C with kink-up direct current. The length of the steps can be maximized by selecting a proper annealing time. The steps have a well-defined U (2, 0) step-edge structure. The growth of both Si and Ge at temperatures between 250 and 400 °C starts with formation of a single-adatom-row nanowire (0.67 nm in width) along the lower edge of each U (2, 0) step. Subsequent growth of Si and Ge at temperatures between 250 and 300 °C results in formation of one-dimensional arrays of nanoclusters (less than 2.0 nm in width) in the unfaulted halves of the 7×7 structure along the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. Differences between the growth of Si and Ge nanoclusters are discussed.",
author = "Takeharu Sekiguchi and Shunji Yoshida and Yohei Shiren and Itoh, {Kohei M} and Josef Mysliveček and Bert Voigtl{\"a}nder",
year = "2007",
doi = "10.1063/1.2722726",
language = "English",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111)

AU - Sekiguchi, Takeharu

AU - Yoshida, Shunji

AU - Shiren, Yohei

AU - Itoh, Kohei M

AU - Mysliveček, Josef

AU - Voigtländer, Bert

PY - 2007

Y1 - 2007

N2 - The very initial stage of the molecular beam epitaxy of Si and Ge on Si (111) -7×7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy. The atomically straight steps have been prepared on a miscut Si(111) substrate by annealing at 830 °C with kink-up direct current. The length of the steps can be maximized by selecting a proper annealing time. The steps have a well-defined U (2, 0) step-edge structure. The growth of both Si and Ge at temperatures between 250 and 400 °C starts with formation of a single-adatom-row nanowire (0.67 nm in width) along the lower edge of each U (2, 0) step. Subsequent growth of Si and Ge at temperatures between 250 and 300 °C results in formation of one-dimensional arrays of nanoclusters (less than 2.0 nm in width) in the unfaulted halves of the 7×7 structure along the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. Differences between the growth of Si and Ge nanoclusters are discussed.

AB - The very initial stage of the molecular beam epitaxy of Si and Ge on Si (111) -7×7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy. The atomically straight steps have been prepared on a miscut Si(111) substrate by annealing at 830 °C with kink-up direct current. The length of the steps can be maximized by selecting a proper annealing time. The steps have a well-defined U (2, 0) step-edge structure. The growth of both Si and Ge at temperatures between 250 and 400 °C starts with formation of a single-adatom-row nanowire (0.67 nm in width) along the lower edge of each U (2, 0) step. Subsequent growth of Si and Ge at temperatures between 250 and 300 °C results in formation of one-dimensional arrays of nanoclusters (less than 2.0 nm in width) in the unfaulted halves of the 7×7 structure along the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. Differences between the growth of Si and Ge nanoclusters are discussed.

UR - http://www.scopus.com/inward/record.url?scp=34247868918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247868918&partnerID=8YFLogxK

U2 - 10.1063/1.2722726

DO - 10.1063/1.2722726

M3 - Article

AN - SCOPUS:34247868918

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 081702

ER -