Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada; Takashi Yagisawa; Toshiaki Makabe

doi:10.1143/JJAP.45.L132

Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada, Takashi Yagisawa, Toshiaki Makabe

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We investigate the relationship between local wall charging and the feature profile in a SiO₂ trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF₄(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO₂ trench during plasma etching. Feature profiles of the SiO₂ trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

Original language	English
Pages (from-to)	L132-L134
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	4-7
DOIs	https://doi.org/10.1143/JJAP.45.L132
Publication status	Published - 2006 Feb 3
Externally published	Yes

Keywords

Competitive process
Feature profile evolution
Plasma process
SiO etching
Surface charging

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.L132

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AB - We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

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KW - Feature profile evolution

KW - Plasma process

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KW - Surface charging

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Self-consistent modeling of feature profile evolution in plasma etching and deposition

Abstract

Keywords

ASJC Scopus subject areas

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