Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada, Takashi Yagisawa, Toshiaki Makabe

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number4-7
DOIs
Publication statusPublished - 2006 Feb 3

Fingerprint

Plasma sheaths
Plasma deposition
Plasma etching
plasma etching
charging
Positive ions
Plasmas
Electrons
profiles
positive ions
sheaths
electrons

Keywords

  • Competitive process
  • Feature profile evolution
  • Plasma process
  • SiO etching
  • Surface charging

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Self-consistent modeling of feature profile evolution in plasma etching and deposition. / Shimada, Takashi; Yagisawa, Takashi; Makabe, Toshiaki.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 4-7, 03.02.2006.

Research output: Contribution to journalArticle

@article{d62871acdb08482d8f0a06811c4347cc,
title = "Self-consistent modeling of feature profile evolution in plasma etching and deposition",
abstract = "We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5{\%})/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.",
keywords = "Competitive process, Feature profile evolution, Plasma process, SiO etching, Surface charging",
author = "Takashi Shimada and Takashi Yagisawa and Toshiaki Makabe",
year = "2006",
month = "2",
day = "3",
doi = "10.1143/JJAP.45.L132",
language = "English",
volume = "45",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4-7",

}

TY - JOUR

T1 - Self-consistent modeling of feature profile evolution in plasma etching and deposition

AU - Shimada, Takashi

AU - Yagisawa, Takashi

AU - Makabe, Toshiaki

PY - 2006/2/3

Y1 - 2006/2/3

N2 - We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

AB - We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

KW - Competitive process

KW - Feature profile evolution

KW - Plasma process

KW - SiO etching

KW - Surface charging

UR - http://www.scopus.com/inward/record.url?scp=32044460156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32044460156&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.L132

DO - 10.1143/JJAP.45.L132

M3 - Article

VL - 45

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4-7

ER -