Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada, Takashi Yagisawa, Toshiaki Makabe

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

Original languageEnglish
Pages (from-to)L132-L134
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number4-7
DOIs
Publication statusPublished - 2006 Feb 3

Keywords

  • Competitive process
  • Feature profile evolution
  • Plasma process
  • SiO etching
  • Surface charging

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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