Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices

Yasuo Shimizu, Kohei M. Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon self-diffusivity at 775 - 875°C is determined based on the shift of optical phonons of diffusion annealed 28Si 20/30Si20 isotope superlattices by Raman spectroscopy. The planar bond-charge model is employed for theoretical calculations of the optical phonon frequencies which strongly depend on the interdiffusion between the interfaces of 28Si and 30Si layers. The atomic mass distribution at the interfaces is calculated based on Fick's diffusion law. Our values at low temperatures deviate from the previously reported single Arrhenius relation, indicating the change of the diffusion mechanism.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages205-206
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • Raman scattering
  • Self-diffusion
  • Silicon isotope superlattices

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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