Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices

Yasuo Shimizu, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon self-diffusivity at 775 - 875°C is determined based on the shift of optical phonons of diffusion annealed 28Si 20/30Si20 isotope superlattices by Raman spectroscopy. The planar bond-charge model is employed for theoretical calculations of the optical phonon frequencies which strongly depend on the interdiffusion between the interfaces of 28Si and 30Si layers. The atomic mass distribution at the interfaces is calculated based on Fick's diffusion law. Our values at low temperatures deviate from the previously reported single Arrhenius relation, indicating the change of the diffusion mechanism.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages205-206
Number of pages2
Volume893
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Fingerprint

superlattices
Raman spectroscopy
isotopes
annealing
spectroscopy
atomic weights
mass distribution
diffusivity
phonons
shift
silicon

Keywords

  • Raman scattering
  • Self-diffusion
  • Silicon isotope superlattices

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices. / Shimizu, Yasuo; Itoh, Kohei M.

AIP Conference Proceedings. Vol. 893 2007. p. 205-206.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shimizu, Y & Itoh, KM 2007, Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices. in AIP Conference Proceedings. vol. 893, pp. 205-206, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2729840
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AB - Silicon self-diffusivity at 775 - 875°C is determined based on the shift of optical phonons of diffusion annealed 28Si 20/30Si20 isotope superlattices by Raman spectroscopy. The planar bond-charge model is employed for theoretical calculations of the optical phonon frequencies which strongly depend on the interdiffusion between the interfaces of 28Si and 30Si layers. The atomic mass distribution at the interfaces is calculated based on Fick's diffusion law. Our values at low temperatures deviate from the previously reported single Arrhenius relation, indicating the change of the diffusion mechanism.

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