Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Tomonori Takahashi, Shigeto Fukatsu, Kohei M Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

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66 Citations (Scopus)

Abstract

Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

Original languageEnglish
Pages (from-to)3674-3676
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
Publication statusPublished - 2003 Mar 15

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diffusion coefficient
nonequilibrium conditions
heat treatment

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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Takahashi, T., Fukatsu, S., Itoh, K. M., Uematsu, M., Fujiwara, A., Kageshima, H., ... Shiraishi, K. (2003). Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions. Journal of Applied Physics, 93(6), 3674-3676. https://doi.org/10.1063/1.1554487

Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions. / Takahashi, Tomonori; Fukatsu, Shigeto; Itoh, Kohei M; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji.

In: Journal of Applied Physics, Vol. 93, No. 6, 15.03.2003, p. 3674-3676.

Research output: Contribution to journalArticle

Takahashi, T, Fukatsu, S, Itoh, KM, Uematsu, M, Fujiwara, A, Kageshima, H, Takahashi, Y & Shiraishi, K 2003, 'Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions', Journal of Applied Physics, vol. 93, no. 6, pp. 3674-3676. https://doi.org/10.1063/1.1554487
Takahashi T, Fukatsu S, Itoh KM, Uematsu M, Fujiwara A, Kageshima H et al. Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions. Journal of Applied Physics. 2003 Mar 15;93(6):3674-3676. https://doi.org/10.1063/1.1554487
Takahashi, Tomonori ; Fukatsu, Shigeto ; Itoh, Kohei M ; Uematsu, Masashi ; Fujiwara, Akira ; Kageshima, Hiroyuki ; Takahashi, Yasuo ; Shiraishi, Kenji. / Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 6. pp. 3674-3676.
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