Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

Research output: Contribution to journalArticle

66 Citations (Scopus)


Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

Original languageEnglish
Pages (from-to)3674-3676
Number of pages3
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2003 Mar 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Self-diffusion of Si in thermally grown SiO<sub>2</sub> under equilibrium conditions'. Together they form a unique fingerprint.

  • Cite this

    Takahashi, T., Fukatsu, S., Itoh, K. M., Uematsu, M., Fujiwara, A., Kageshima, H., Takahashi, Y., & Shiraishi, K. (2003). Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions. Journal of Applied Physics, 93(6), 3674-3676.