TY - GEN
T1 - Semiconductor Topological Nanophotonics
AU - Ota, Y.
AU - Arakawa, Y.
AU - Iwamoto, S.
N1 - Funding Information:
We would like to express sincere thanks to T. Yamaguchi, H. Yoshimi, R. Katsumi, K. Watanabe, F. Liu, K. Wakabayashi, N. Ishida for their great contributions to the presented work. Some of the studies discussed here were partially supported by Japan Society for the Promotion of Science (15H05700, 15H05868, 17H06138), Core Research for Evolutional Science and Technology (JPMJCR19T1).
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - We will discuss possible applications of topological photonics to photonic integrated circuit technologies. We design nanophotonic elements based on topological edge states emerging at the exteriors of bulk structures and apply them to compact semiconductor lasers and waveguides. Such topological photonic devices are known to be immune to fabrication imperfections and therefore are suitable for building robust optical circuitry. We also address the idea of topological high-power lasers that take advantage of topological edge states for robust single mode lasing.
AB - We will discuss possible applications of topological photonics to photonic integrated circuit technologies. We design nanophotonic elements based on topological edge states emerging at the exteriors of bulk structures and apply them to compact semiconductor lasers and waveguides. Such topological photonic devices are known to be immune to fabrication imperfections and therefore are suitable for building robust optical circuitry. We also address the idea of topological high-power lasers that take advantage of topological edge states for robust single mode lasing.
UR - http://www.scopus.com/inward/record.url?scp=85127001716&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85127001716&partnerID=8YFLogxK
U2 - 10.1109/IEDM19574.2021.9720716
DO - 10.1109/IEDM19574.2021.9720716
M3 - Conference contribution
AN - SCOPUS:85127001716
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 38.5.1-38.5.4
BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021
Y2 - 11 December 2021 through 16 December 2021
ER -