Shallow impurity absorption spectroscopy in isotopically enriched silicon

M. Steger; A. Yang; D. Karaiskaj; M. L.W. Thewalt; E. E. Haller; J. W. Ager; M. Cardona; H. Riemann; N. V. Abrosimov; A. V. Gusev; A. D. Bulanov; A. K. Kaliteevskii; O. N. Godisov; P. Becker; H. J. Pohl; K. M. Itoh

doi:10.1063/1.2729853

Shallow impurity absorption spectroscopy in isotopically enriched silicon

M. Steger, A. Yang, D. Karaiskaj, M. L.W. Thewalt, E. E. Haller, J. W. Ager, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Karaiskaj et al. showed that the isotopic randomness present in natural Si (^nat Si) causes inhomogeneous broadening of many of the ground state to excited state infrared absorption transitions of the shallow donor phosphorous and acceptor boron. This was surprising since it was thought that the observed linewidths of shallow impurities in silicon are at their fundamental lifetime limit. We report improved high-resolution infrared absorption studies of these impurities in isotopically enriched ²⁸Si, ²⁹Si and ³⁰Si. The new data improves on the linewidths of earlier spectra due to reduced concentration broadening. Some of the transitions in ²⁸Si show the narrowest FWHM ever reported for shallow donor and acceptor absorption transitions.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	231-232
Number of pages	2
DOIs	https://doi.org/10.1063/1.2729853
Publication status	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 2006 Jul 24 → 2006 Jul 28

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	06/7/24 → 06/7/28

Keywords

Infrared absorption
Isotopically enriched silicon
Shallow impurities

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.2729853

Cite this

Steger, M., Yang, A., Karaiskaj, D., Thewalt, M. L. W., Haller, E. E., Ager, J. W., Cardona, M., Riemann, H., Abrosimov, N. V., Gusev, A. V., Bulanov, A. D., Kaliteevskii, A. K., Godisov, O. N., Becker, P., Pohl, H. J., & Itoh, K. M. (2007). Shallow impurity absorption spectroscopy in isotopically enriched silicon. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 231-232). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2729853

Shallow impurity absorption spectroscopy in isotopically enriched silicon. / Steger, M.; Yang, A.; Karaiskaj, D. et al.

Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 231-232 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Steger, M, Yang, A, Karaiskaj, D, Thewalt, MLW, Haller, EE, Ager, JW, Cardona, M, Riemann, H, Abrosimov, NV, Gusev, AV, Bulanov, AD, Kaliteevskii, AK, Godisov, ON, Becker, P, Pohl, HJ & Itoh, KM 2007, Shallow impurity absorption spectroscopy in isotopically enriched silicon. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 231-232, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2729853

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abstract = "Karaiskaj et al. showed that the isotopic randomness present in natural Si (nat Si) causes inhomogeneous broadening of many of the ground state to excited state infrared absorption transitions of the shallow donor phosphorous and acceptor boron. This was surprising since it was thought that the observed linewidths of shallow impurities in silicon are at their fundamental lifetime limit. We report improved high-resolution infrared absorption studies of these impurities in isotopically enriched 28Si, 29Si and 30Si. The new data improves on the linewidths of earlier spectra due to reduced concentration broadening. Some of the transitions in 28Si show the narrowest FWHM ever reported for shallow donor and acceptor absorption transitions.",

keywords = "Infrared absorption, Isotopically enriched silicon, Shallow impurities",

author = "M. Steger and A. Yang and D. Karaiskaj and Thewalt, {M. L.W.} and Haller, {E. E.} and Ager, {J. W.} and M. Cardona and H. Riemann and Abrosimov, {N. V.} and Gusev, {A. V.} and Bulanov, {A. D.} and Kaliteevskii, {A. K.} and Godisov, {O. N.} and P. Becker and Pohl, {H. J.} and Itoh, {K. M.}",

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AU - Steger, M.

AU - Yang, A.

AU - Karaiskaj, D.

AU - Thewalt, M. L.W.

AU - Haller, E. E.

AU - Ager, J. W.

AU - Cardona, M.

AU - Riemann, H.

AU - Abrosimov, N. V.

AU - Gusev, A. V.

AU - Bulanov, A. D.

AU - Kaliteevskii, A. K.

AU - Godisov, O. N.

AU - Becker, P.

AU - Pohl, H. J.

AU - Itoh, K. M.

PY - 2007

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AB - Karaiskaj et al. showed that the isotopic randomness present in natural Si (nat Si) causes inhomogeneous broadening of many of the ground state to excited state infrared absorption transitions of the shallow donor phosphorous and acceptor boron. This was surprising since it was thought that the observed linewidths of shallow impurities in silicon are at their fundamental lifetime limit. We report improved high-resolution infrared absorption studies of these impurities in isotopically enriched 28Si, 29Si and 30Si. The new data improves on the linewidths of earlier spectra due to reduced concentration broadening. Some of the transitions in 28Si show the narrowest FWHM ever reported for shallow donor and acceptor absorption transitions.

KW - Infrared absorption

KW - Isotopically enriched silicon

KW - Shallow impurities

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BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006

Y2 - 24 July 2006 through 28 July 2006

ER -

Shallow impurity absorption spectroscopy in isotopically enriched silicon

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