Shallow impurity absorption spectroscopy in isotopically enriched silicon

M. Steger, A. Yang, D. Karaiskaj, M. L W Thewalt, E. E. Haller, J. W. Ager, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Karaiskaj et al. showed that the isotopic randomness present in natural Si (nat Si) causes inhomogeneous broadening of many of the ground state to excited state infrared absorption transitions of the shallow donor phosphorous and acceptor boron. This was surprising since it was thought that the observed linewidths of shallow impurities in silicon are at their fundamental lifetime limit. We report improved high-resolution infrared absorption studies of these impurities in isotopically enriched 28Si, 29Si and 30Si. The new data improves on the linewidths of earlier spectra due to reduced concentration broadening. Some of the transitions in 28Si show the narrowest FWHM ever reported for shallow donor and acceptor absorption transitions.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages231-232
Number of pages2
Volume893
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Fingerprint

absorption spectroscopy
impurities
infrared absorption
silicon
boron
life (durability)
ground state
causes
high resolution
excitation

Keywords

  • Infrared absorption
  • Isotopically enriched silicon
  • Shallow impurities

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Steger, M., Yang, A., Karaiskaj, D., Thewalt, M. L. W., Haller, E. E., Ager, J. W., ... Itoh, K. M. (2007). Shallow impurity absorption spectroscopy in isotopically enriched silicon. In AIP Conference Proceedings (Vol. 893, pp. 231-232) https://doi.org/10.1063/1.2729853

Shallow impurity absorption spectroscopy in isotopically enriched silicon. / Steger, M.; Yang, A.; Karaiskaj, D.; Thewalt, M. L W; Haller, E. E.; Ager, J. W.; Cardona, M.; Riemann, H.; Abrosimov, N. V.; Gusev, A. V.; Bulanov, A. D.; Kaliteevskii, A. K.; Godisov, O. N.; Becker, P.; Pohl, H. J.; Itoh, Kohei M.

AIP Conference Proceedings. Vol. 893 2007. p. 231-232.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Steger, M, Yang, A, Karaiskaj, D, Thewalt, MLW, Haller, EE, Ager, JW, Cardona, M, Riemann, H, Abrosimov, NV, Gusev, AV, Bulanov, AD, Kaliteevskii, AK, Godisov, ON, Becker, P, Pohl, HJ & Itoh, KM 2007, Shallow impurity absorption spectroscopy in isotopically enriched silicon. in AIP Conference Proceedings. vol. 893, pp. 231-232, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2729853
Steger M, Yang A, Karaiskaj D, Thewalt MLW, Haller EE, Ager JW et al. Shallow impurity absorption spectroscopy in isotopically enriched silicon. In AIP Conference Proceedings. Vol. 893. 2007. p. 231-232 https://doi.org/10.1063/1.2729853
Steger, M. ; Yang, A. ; Karaiskaj, D. ; Thewalt, M. L W ; Haller, E. E. ; Ager, J. W. ; Cardona, M. ; Riemann, H. ; Abrosimov, N. V. ; Gusev, A. V. ; Bulanov, A. D. ; Kaliteevskii, A. K. ; Godisov, O. N. ; Becker, P. ; Pohl, H. J. ; Itoh, Kohei M. / Shallow impurity absorption spectroscopy in isotopically enriched silicon. AIP Conference Proceedings. Vol. 893 2007. pp. 231-232
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AU - Riemann, H.

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