Sharp photoluminescence of CdS nanocrystals in Al2O3 matrices formed by sequential ion implantation

M. Ando, Y. Kanemitsu, T. Kushida, K. Matsuda, Toshiharu Saiki, C. W. White

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We report on photoluminescence (PL) experiments in CdS nanocrystals fabricated by sequential ion implantation in Al2O3 matrices. The PL spectrum and the spatial image of the PL intensity have been studied at 8 K using a scanning near-field optical microscope. The PL spectrum at each bright spot has been found to consist of narrow lines of various energies, although the spectrum measured by conventional optics shows a single and broad band locating below the free-exciton absorption energy. The origin of the sharp PL lines in CdS nanocrystals will be discussed.

Original languageEnglish
Pages (from-to)539-541
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number4
DOIs
Publication statusPublished - 2001 Jul 23
Externally publishedYes

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ion implantation
nanocrystals
photoluminescence
matrices
energy absorption
optical microscopes
near fields
excitons
optics
broadband
scanning
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sharp photoluminescence of CdS nanocrystals in Al2O3 matrices formed by sequential ion implantation. / Ando, M.; Kanemitsu, Y.; Kushida, T.; Matsuda, K.; Saiki, Toshiharu; White, C. W.

In: Applied Physics Letters, Vol. 79, No. 4, 23.07.2001, p. 539-541.

Research output: Contribution to journalArticle

Ando, M. ; Kanemitsu, Y. ; Kushida, T. ; Matsuda, K. ; Saiki, Toshiharu ; White, C. W. / Sharp photoluminescence of CdS nanocrystals in Al2O3 matrices formed by sequential ion implantation. In: Applied Physics Letters. 2001 ; Vol. 79, No. 4. pp. 539-541.
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