Shear force detector using piezo-resistive beams with sidewall-doping

Hidetoshi Takahashi, A. Nakai, K. Matsumoto, I. Shimoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.

Original languageEnglish
Title of host publication2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Pages599-602
Number of pages4
DOIs
Publication statusPublished - 2012 May 7
Externally publishedYes
Event2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France
Duration: 2012 Jan 292012 Feb 2

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

Other2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
CountryFrance
CityParis
Period12/1/2912/2/2

Fingerprint

Doping (additives)
shear
Detectors
detectors
Silicon
elastic bodies
Sensors
insulators
wafers
silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Takahashi, H., Nakai, A., Matsumoto, K., & Shimoyama, I. (2012). Shear force detector using piezo-resistive beams with sidewall-doping. In 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 (pp. 599-602). [6170259] (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2012.6170259

Shear force detector using piezo-resistive beams with sidewall-doping. / Takahashi, Hidetoshi; Nakai, A.; Matsumoto, K.; Shimoyama, I.

2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. p. 599-602 6170259 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takahashi, H, Nakai, A, Matsumoto, K & Shimoyama, I 2012, Shear force detector using piezo-resistive beams with sidewall-doping. in 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012., 6170259, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 599-602, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012, Paris, France, 12/1/29. https://doi.org/10.1109/MEMSYS.2012.6170259
Takahashi H, Nakai A, Matsumoto K, Shimoyama I. Shear force detector using piezo-resistive beams with sidewall-doping. In 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. p. 599-602. 6170259. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2012.6170259
Takahashi, Hidetoshi ; Nakai, A. ; Matsumoto, K. ; Shimoyama, I. / Shear force detector using piezo-resistive beams with sidewall-doping. 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. pp. 599-602 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).
@inproceedings{bff304207d144ef5813ecc5a088b3259,
title = "Shear force detector using piezo-resistive beams with sidewall-doping",
abstract = "This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.",
author = "Hidetoshi Takahashi and A. Nakai and K. Matsumoto and I. Shimoyama",
year = "2012",
month = "5",
day = "7",
doi = "10.1109/MEMSYS.2012.6170259",
language = "English",
isbn = "9781467303248",
series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",
pages = "599--602",
booktitle = "2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012",

}

TY - GEN

T1 - Shear force detector using piezo-resistive beams with sidewall-doping

AU - Takahashi, Hidetoshi

AU - Nakai, A.

AU - Matsumoto, K.

AU - Shimoyama, I.

PY - 2012/5/7

Y1 - 2012/5/7

N2 - This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.

AB - This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.

UR - http://www.scopus.com/inward/record.url?scp=84860432057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860432057&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2012.6170259

DO - 10.1109/MEMSYS.2012.6170259

M3 - Conference contribution

AN - SCOPUS:84860432057

SN - 9781467303248

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 599

EP - 602

BT - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012

ER -