Short-channel effects in subquarter-micrometer-gate HEMT's: Simulation and experiment

Yuji Awano, Makoto Kosugi, Kinjiro Kosemura, Takashi Mimura, Masayuki Abe

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Abstract

The authors studied the electrical properties of subquarter-micrometer-gate HEMTs (high electron mobility transistors) by Monte Carlo simulation and experiment. Simulation shows that subquarter-micrometer-gate HEMTs have extremely high performance, and the near-ballistic movement under the gate was confirmed. It is also shown that the aspect ratio of the channel could be used as a guide to determine the extent of short-channel effects. The transverse-domain formation inherent in short-channel HEMTs may also contribute to the smaller short-channel effect by limiting undesirable substrate current. Experimentally, only a negligible short-channel effect was observed when the gate length was reduced from 1.25 to 0.14 μm. Thus, it is not necessary to design and fabricate a special structure for HEMTs, as such a structure might have limited applications.

Original languageEnglish
Pages (from-to)2260-2266
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume36
Issue number10
DOIs
Publication statusPublished - 1989 Oct
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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