Short-Channel Effects in Subquarter-Micrometer-Gate HEMT’s: Simulation and Experiment

Yuji Awano, Makoto Kosugi, Kinjiro Kosemura, Takashi Mimura, Masayuki Abe

    Research output: Contribution to journalArticlepeer-review

    144 Citations (Scopus)

    Abstract

    We have studied the electrical properties of subquarter- micrometer-gate HEMT's by Monte Carlo simulation and experiment. The theoretical dependence of HEMT performance on the aspect ratio of the channel is discussed. The contribution of the transverse domain to the short-channel effect is also reported. Experimentally, only a negligible short-channel effect was observed when the gate length was reduced from 1.25 to 0.14 μm. Thus, it is not necessary to design and fabricate a special structure for HEMT’s, as such a structure might have limited applications.

    Original languageEnglish
    Pages (from-to)2260-2266
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume36
    Issue number10
    DOIs
    Publication statusPublished - 1989 Oct

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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