Short-Channel Effects in Subquarter-Micrometer-Gate HEMT’s: Simulation and Experiment

Yuji Awano; Makoto Kosugi; Kinjiro Kosemura; Takashi Mimura; Masayuki Abe

doi:10.1109/16.40908

Short-Channel Effects in Subquarter-Micrometer-Gate HEMT’s: Simulation and Experiment

Yuji Awano, Makoto Kosugi, Kinjiro Kosemura, Takashi Mimura, Masayuki Abe

Research output: Contribution to journal › Article › peer-review

152 Citations (Scopus)

Abstract

We have studied the electrical properties of subquarter- micrometer-gate HEMT's by Monte Carlo simulation and experiment. The theoretical dependence of HEMT performance on the aspect ratio of the channel is discussed. The contribution of the transverse domain to the short-channel effect is also reported. Experimentally, only a negligible short-channel effect was observed when the gate length was reduced from 1.25 to 0.14 μm. Thus, it is not necessary to design and fabricate a special structure for HEMT’s, as such a structure might have limited applications.

Original language	English
Pages (from-to)	2260-2266
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	36
Issue number	10
DOIs	https://doi.org/10.1109/16.40908
Publication status	Published - 1989 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "We have studied the electrical properties of subquarter- micrometer-gate HEMT's by Monte Carlo simulation and experiment. The theoretical dependence of HEMT performance on the aspect ratio of the channel is discussed. The contribution of the transverse domain to the short-channel effect is also reported. Experimentally, only a negligible short-channel effect was observed when the gate length was reduced from 1.25 to 0.14 μm. Thus, it is not necessary to design and fabricate a special structure for HEMT{\textquoteright}s, as such a structure might have limited applications.",

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AU - Mimura, Takashi

AU - Abe, Masayuki

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Short-Channel Effects in Subquarter-Micrometer-Gate HEMT’s: Simulation and Experiment

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