Short-channel performance and mobility analysis of <110>- and <100>-Oriented tri-gate nanowire MOSFETs with raised source/drain extensions

M. Saitoh, Y. Nakabayashi, H. Itokawa, M. Murano, I. Mizushima, K. Uchida, T. Numata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    33 Citations (Scopus)

    Abstract

    We successfully reduced the parasitic resistance of nanowire transistors (NW Tr.) by raised S/D extensions with thin spacers (<10nm). Id variations are suppressed by spacer thinning and parasitic capacitance increase is minimal. By adopting <100> NW instead of <110> NW, Ion = 1mA/μm for Ioff = 100nA/μm is achieved without stress techniques. Long-L mobility (μ) was systematically studied by separating top and side channel μ. μ of <100> nFETs and <110> pFETs (potentially-high ?) largely degrade due to side-surface roughness. Gate stress and interface traps affect μ?of <110> nFETs and <110> pFETs, respectively.

    Original languageEnglish
    Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
    Pages169-170
    Number of pages2
    DOIs
    Publication statusPublished - 2010 Oct 19
    Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
    Duration: 2010 Jun 152010 Jun 17

    Publication series

    NameDigest of Technical Papers - Symposium on VLSI Technology
    ISSN (Print)0743-1562

    Other

    Other2010 Symposium on VLSI Technology, VLSIT 2010
    CountryUnited States
    CityHonolulu, HI
    Period10/6/1510/6/17

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Saitoh, M., Nakabayashi, Y., Itokawa, H., Murano, M., Mizushima, I., Uchida, K., & Numata, T. (2010). Short-channel performance and mobility analysis of <110>- and <100>-Oriented tri-gate nanowire MOSFETs with raised source/drain extensions. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 169-170). [5556214] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556214