Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

Original languageEnglish
Title of host publicationProceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
Pages231-236
Number of pages6
Volume2006
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 - Klarlsruhe, Germany
Duration: 2006 Mar 22006 Mar 3

Other

OtherIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
CountryGermany
CityKlarlsruhe
Period06/3/206/3/3

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ohba, R., Matsushita, D., Muraoka, K., Yasuda, S., Tanamoto, T., Uchida, K., & Fujita, S. (2006). Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 (Vol. 2006, pp. 231-236). [1602445] https://doi.org/10.1109/ISVLSI.2006.83