Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

    Original languageEnglish
    Title of host publicationProceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
    Pages231-236
    Number of pages6
    DOIs
    Publication statusPublished - 2006 Oct 9
    EventIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 - Klarlsruhe, Germany
    Duration: 2006 Mar 22006 Mar 3

    Publication series

    NameProceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
    Volume2006

    Other

    OtherIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
    CountryGermany
    CityKlarlsruhe
    Period06/3/206/3/3

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Ohba, R., Matsushita, D., Muraoka, K., Yasuda, S., Tanamoto, T., Uchida, K., & Fujita, S. (2006). Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 (pp. 231-236). [1602445] (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006; Vol. 2006). https://doi.org/10.1109/ISVLSI.2006.83