Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

Original languageEnglish
Title of host publicationProceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
Pages231-236
Number of pages6
Volume2006
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 - Klarlsruhe, Germany
Duration: 2006 Mar 22006 Mar 3

Other

OtherIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
CountryGermany
CityKlarlsruhe
Period06/3/206/3/3

Fingerprint

Random number generation
Silicon nitride
Nanocrystals
Tunnels
Networks (circuits)
Network security
MOSFET devices
Wireless networks

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ohba, R., Matsushita, D., Muraoka, K., Yasuda, S., Tanamoto, T., Uchida, K., & Fujita, S. (2006). Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 (Vol. 2006, pp. 231-236). [1602445] https://doi.org/10.1109/ISVLSI.2006.83

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. / Ohba, Ryuji; Matsushita, Daisuke; Muraoka, Koichi; Yasuda, Shinichi; Tanamoto, Tetsufumi; Uchida, Ken; Fujita, Shinobu.

Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. Vol. 2006 2006. p. 231-236 1602445.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohba, R, Matsushita, D, Muraoka, K, Yasuda, S, Tanamoto, T, Uchida, K & Fujita, S 2006, Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. in Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. vol. 2006, 1602445, pp. 231-236, IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006, Klarlsruhe, Germany, 06/3/2. https://doi.org/10.1109/ISVLSI.2006.83
Ohba R, Matsushita D, Muraoka K, Yasuda S, Tanamoto T, Uchida K et al. Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. Vol. 2006. 2006. p. 231-236. 1602445 https://doi.org/10.1109/ISVLSI.2006.83
Ohba, Ryuji ; Matsushita, Daisuke ; Muraoka, Koichi ; Yasuda, Shinichi ; Tanamoto, Tetsufumi ; Uchida, Ken ; Fujita, Shinobu. / Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. Vol. 2006 2006. pp. 231-236
@inproceedings{7dfcd9e360444a6c8ef5361e7fee886b,
title = "Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation",
abstract = "It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.",
author = "Ryuji Ohba and Daisuke Matsushita and Koichi Muraoka and Shinichi Yasuda and Tetsufumi Tanamoto and Ken Uchida and Shinobu Fujita",
year = "2006",
doi = "10.1109/ISVLSI.2006.83",
language = "English",
isbn = "0769525334",
volume = "2006",
pages = "231--236",
booktitle = "Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006",

}

TY - GEN

T1 - Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

AU - Ohba, Ryuji

AU - Matsushita, Daisuke

AU - Muraoka, Koichi

AU - Yasuda, Shinichi

AU - Tanamoto, Tetsufumi

AU - Uchida, Ken

AU - Fujita, Shinobu

PY - 2006

Y1 - 2006

N2 - It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

AB - It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

UR - http://www.scopus.com/inward/record.url?scp=33749324542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749324542&partnerID=8YFLogxK

U2 - 10.1109/ISVLSI.2006.83

DO - 10.1109/ISVLSI.2006.83

M3 - Conference contribution

AN - SCOPUS:33749324542

SN - 0769525334

SN - 9780769525334

VL - 2006

SP - 231

EP - 236

BT - Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

ER -