Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

K. Nonaka, Hiroyuki Tsuda, T. Kurokawa, H. Uenohara, H. Iwamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.

Original languageEnglish
Title of host publicationConference Digest - 13th IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages132-133
Number of pages2
ISBN (Electronic)4930813514
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes
Event13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan
Duration: 1992 Sep 211992 Sep 25

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume1992-September
ISSN (Print)0899-9406

Conference

Conference13th IEEE International Semiconductor Laser Conference, ISLC 1992
CountryJapan
CityTakamatsu, Kagawa
Period92/9/2192/9/25

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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