Side-light-injection MQW bistable laser using saturable absorption and gain quenching

H. Uenohara, Y. Kawamura, H. Iwamura, K. Nonaka, H. Tsuda, T. Kurokawa

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a sidelight-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 µW results in saturable absorption in one intersection biased at +0.65 V, and 570µW causes gain quenching in the other intersection biased at +0.93V.

Original languageEnglish
Pages (from-to)1973-1975
Number of pages3
JournalElectronics Letters
Volume28
Issue number21
DOIs
Publication statusPublished - 1992 Oct
Externally publishedYes

Keywords

  • Lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Side-light-injection MQW bistable laser using saturable absorption and gain quenching'. Together they form a unique fingerprint.

  • Cite this