Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon

Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Magnetic properties of manganese (Mn) nanosilicide embedded in thin silicon-on-insulator (SOI) layers are investigated. Mn nanosilicide formed by Mn+ ion implantation into a thin SOI layer followed by a thermal annealing at 600-900 °C shows soft ferromagnetism or superparamagnetism at 5 K. A monotonic decrease of the saturation magnetization is observed with increasing temperature for post implantation annealing and consequently with increasing mean particle size of nanosilicide. In addition, the magnetization is found to be enhanced when the Si surrounding the Mn nanosilicide is selectively removed. These results indicate that the magnetic moment indeed arises from the nanosilicide and is sensitive to the interface conditions.

Original languageEnglish
Pages (from-to)8505-8508
Number of pages4
JournalThin Solid Films
Volume519
Issue number24
DOIs
Publication statusPublished - 2011 Oct 3

Fingerprint

Silicon
Manganese
manganese
Magnetic properties
magnetic properties
silicon
insulators
manganese ions
magnetization
annealing
Superparamagnetism
Annealing
ferromagnetism
ion implantation
Ferromagnetism
implantation
Saturation magnetization
magnetic moments
Magnetic moments
Ion implantation

Keywords

  • Ferromagnetism
  • Manganese
  • Nanostructure
  • Silicide
  • Silicon
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Ono, Y., Miyazaki, Y., Yabuuchi, S., Kageshima, H., Nagase, M., Fujiwara, A., & Ohta, E. (2011). Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon. Thin Solid Films, 519(24), 8505-8508. https://doi.org/10.1016/j.tsf.2011.05.027

Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon. / Ono, Y.; Miyazaki, Y.; Yabuuchi, S.; Kageshima, H.; Nagase, M.; Fujiwara, A.; Ohta, E.

In: Thin Solid Films, Vol. 519, No. 24, 03.10.2011, p. 8505-8508.

Research output: Contribution to journalArticle

Ono, Y, Miyazaki, Y, Yabuuchi, S, Kageshima, H, Nagase, M, Fujiwara, A & Ohta, E 2011, 'Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon', Thin Solid Films, vol. 519, no. 24, pp. 8505-8508. https://doi.org/10.1016/j.tsf.2011.05.027
Ono Y, Miyazaki Y, Yabuuchi S, Kageshima H, Nagase M, Fujiwara A et al. Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon. Thin Solid Films. 2011 Oct 3;519(24):8505-8508. https://doi.org/10.1016/j.tsf.2011.05.027
Ono, Y. ; Miyazaki, Y. ; Yabuuchi, S. ; Kageshima, H. ; Nagase, M. ; Fujiwara, A. ; Ohta, E. / Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon. In: Thin Solid Films. 2011 ; Vol. 519, No. 24. pp. 8505-8508.
@article{06457f2110044732ac2f4a974d901922,
title = "Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon",
abstract = "Magnetic properties of manganese (Mn) nanosilicide embedded in thin silicon-on-insulator (SOI) layers are investigated. Mn nanosilicide formed by Mn+ ion implantation into a thin SOI layer followed by a thermal annealing at 600-900 °C shows soft ferromagnetism or superparamagnetism at 5 K. A monotonic decrease of the saturation magnetization is observed with increasing temperature for post implantation annealing and consequently with increasing mean particle size of nanosilicide. In addition, the magnetization is found to be enhanced when the Si surrounding the Mn nanosilicide is selectively removed. These results indicate that the magnetic moment indeed arises from the nanosilicide and is sensitive to the interface conditions.",
keywords = "Ferromagnetism, Manganese, Nanostructure, Silicide, Silicon, Spintronics",
author = "Y. Ono and Y. Miyazaki and S. Yabuuchi and H. Kageshima and M. Nagase and A. Fujiwara and E. Ohta",
year = "2011",
month = "10",
day = "3",
doi = "10.1016/j.tsf.2011.05.027",
language = "English",
volume = "519",
pages = "8505--8508",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "24",

}

TY - JOUR

T1 - Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon

AU - Ono, Y.

AU - Miyazaki, Y.

AU - Yabuuchi, S.

AU - Kageshima, H.

AU - Nagase, M.

AU - Fujiwara, A.

AU - Ohta, E.

PY - 2011/10/3

Y1 - 2011/10/3

N2 - Magnetic properties of manganese (Mn) nanosilicide embedded in thin silicon-on-insulator (SOI) layers are investigated. Mn nanosilicide formed by Mn+ ion implantation into a thin SOI layer followed by a thermal annealing at 600-900 °C shows soft ferromagnetism or superparamagnetism at 5 K. A monotonic decrease of the saturation magnetization is observed with increasing temperature for post implantation annealing and consequently with increasing mean particle size of nanosilicide. In addition, the magnetization is found to be enhanced when the Si surrounding the Mn nanosilicide is selectively removed. These results indicate that the magnetic moment indeed arises from the nanosilicide and is sensitive to the interface conditions.

AB - Magnetic properties of manganese (Mn) nanosilicide embedded in thin silicon-on-insulator (SOI) layers are investigated. Mn nanosilicide formed by Mn+ ion implantation into a thin SOI layer followed by a thermal annealing at 600-900 °C shows soft ferromagnetism or superparamagnetism at 5 K. A monotonic decrease of the saturation magnetization is observed with increasing temperature for post implantation annealing and consequently with increasing mean particle size of nanosilicide. In addition, the magnetization is found to be enhanced when the Si surrounding the Mn nanosilicide is selectively removed. These results indicate that the magnetic moment indeed arises from the nanosilicide and is sensitive to the interface conditions.

KW - Ferromagnetism

KW - Manganese

KW - Nanostructure

KW - Silicide

KW - Silicon

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=80053575353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053575353&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.05.027

DO - 10.1016/j.tsf.2011.05.027

M3 - Article

AN - SCOPUS:80053575353

VL - 519

SP - 8505

EP - 8508

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 24

ER -