Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki, Hiroto Watanabe, Taiki Ueno, Yuya Oaki, Hiroaki Imai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.

Original languageEnglish
Pages (from-to)3014-3017
Number of pages4
JournalLangmuir
Volume33
Issue number12
DOIs
Publication statusPublished - 2017 Mar 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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