Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki; Hiroto Watanabe; Taiki Ueno; Yuya Oaki; Hiroaki Imai

doi:10.1021/acs.langmuir.6b04181

Significant Increase in Band Gap and Emission Efficiency of In₂O₃ Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki, Hiroto Watanabe, Taiki Ueno, Yuya Oaki, Hiroaki Imai

Department of Applied Chemistry

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

The size of In₂O₃ quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In₂O₃-QDs increase remarkably when their size is decreased below 1 nm.

Original language	English
Pages (from-to)	3014-3017
Number of pages	4
Journal	Langmuir
Volume	33
Issue number	12
DOIs	https://doi.org/10.1021/acs.langmuir.6b04181
Publication status	Published - 2017 Mar 28

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

Access to Document

10.1021/acs.langmuir.6b04181

Fingerprint Dive into the research topics of 'Significant Increase in Band Gap and Emission Efficiency of In<sub>2</sub>O<sub>3</sub> Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas'. Together they form a unique fingerprint.

Cite this

Suzuki, T., Watanabe, H., Ueno, T., Oaki, Y., & Imai, H. (2017). Significant Increase in Band Gap and Emission Efficiency of In₂O₃ Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas. Langmuir, 33(12), 3014-3017. https://doi.org/10.1021/acs.langmuir.6b04181

@article{633da2340a4b4136b005d203b3921c8a,

title = "Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas",

abstract = "The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.",

author = "Takafumi Suzuki and Hiroto Watanabe and Taiki Ueno and Yuya Oaki and Hiroaki Imai",

year = "2017",

month = mar,

day = "28",

doi = "10.1021/acs.langmuir.6b04181",

language = "English",

volume = "33",

pages = "3014--3017",

journal = "Langmuir",

issn = "0743-7463",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

AU - Suzuki, Takafumi

AU - Watanabe, Hiroto

AU - Ueno, Taiki

AU - Oaki, Yuya

AU - Imai, Hiroaki

PY - 2017/3/28

Y1 - 2017/3/28

N2 - The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.

AB - The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.

UR - http://www.scopus.com/inward/record.url?scp=85016428390&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016428390&partnerID=8YFLogxK

U2 - 10.1021/acs.langmuir.6b04181

DO - 10.1021/acs.langmuir.6b04181

M3 - Article

C2 - 28271895

AN - SCOPUS:85016428390

VL - 33

SP - 3014

EP - 3017

JO - Langmuir

JF - Langmuir

SN - 0743-7463

IS - 12

ER -