Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki; Hiroto Watanabe; Taiki Ueno; Yuya Oaki; Hiroaki Imai

doi:10.1021/acs.langmuir.6b04181

Significant Increase in Band Gap and Emission Efficiency of In₂O₃ Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki, Hiroto Watanabe, Taiki Ueno, Yuya Oaki, Hiroaki Imai

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The size of In₂O₃ quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In₂O₃-QDs increase remarkably when their size is decreased below 1 nm.

Original language	English
Pages (from-to)	3014-3017
Number of pages	4
Journal	Langmuir
Volume	33
Issue number	12
DOIs	https://doi.org/10.1021/acs.langmuir.6b04181
Publication status	Published - 2017 Mar 28

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

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10.1021/acs.langmuir.6b04181

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abstract = "The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.",

author = "Takafumi Suzuki and Hiroto Watanabe and Taiki Ueno and Yuya Oaki and Hiroaki Imai",

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AU - Oaki, Yuya

AU - Imai, Hiroaki

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