Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki, Hiroto Watanabe, Taiki Ueno, Yuya Oaki, Hiroaki Imai

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.

Original languageEnglish
Pages (from-to)3014-3017
Number of pages4
JournalLangmuir
Volume33
Issue number12
DOIs
Publication statusPublished - 2017 Mar 28

Fingerprint

Silicon Dioxide
Semiconductor quantum dots
Energy gap
Tuning
tuning
Silica
quantum dots
silicon dioxide
Quantum yield
Photoluminescence
templates
photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

Cite this

Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas. / Suzuki, Takafumi; Watanabe, Hiroto; Ueno, Taiki; Oaki, Yuya; Imai, Hiroaki.

In: Langmuir, Vol. 33, No. 12, 28.03.2017, p. 3014-3017.

Research output: Contribution to journalArticle

@article{633da2340a4b4136b005d203b3921c8a,
title = "Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas",
abstract = "The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.",
author = "Takafumi Suzuki and Hiroto Watanabe and Taiki Ueno and Yuya Oaki and Hiroaki Imai",
year = "2017",
month = "3",
day = "28",
doi = "10.1021/acs.langmuir.6b04181",
language = "English",
volume = "33",
pages = "3014--3017",
journal = "Langmuir",
issn = "0743-7463",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

AU - Suzuki, Takafumi

AU - Watanabe, Hiroto

AU - Ueno, Taiki

AU - Oaki, Yuya

AU - Imai, Hiroaki

PY - 2017/3/28

Y1 - 2017/3/28

N2 - The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.

AB - The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.

UR - http://www.scopus.com/inward/record.url?scp=85016428390&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016428390&partnerID=8YFLogxK

U2 - 10.1021/acs.langmuir.6b04181

DO - 10.1021/acs.langmuir.6b04181

M3 - Article

AN - SCOPUS:85016428390

VL - 33

SP - 3014

EP - 3017

JO - Langmuir

JF - Langmuir

SN - 0743-7463

IS - 12

ER -