Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization

Yasuo Shimizu, Akio Takano, Kohei M Itoh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We present a silicon isotope superlattice structure that we believe to be the most ideal secondary ion mass spectrometry standard sample for the dopant concentration depth profiling required for characterization of the shallow junction formed by ion implantation. The precisely stacked alternating layers of silicon isotopes function as a depth ruler. Therefore, it enables us to calibrate the depth scale of dopant based on the positions of silicon isotopes. We show the depth profiles of silicon isotopes and arsenic in the arsenic ion-implanted silicon isotope superlattice as a representing example.

Original languageEnglish
Pages (from-to)1345-1347
Number of pages3
JournalApplied Surface Science
Volume255
Issue number4
DOIs
Publication statusPublished - 2008 Dec 15

Fingerprint

Superlattices
Silicon
Secondary ion mass spectrometry
Isotopes
Arsenic
Doping (additives)
Depth profiling
Ion implantation
Ions

Keywords

  • Isotopes
  • Shallow junction
  • Silicon
  • SIMS
  • Superlattices

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Silicon isotope superlattices : Ideal SIMS standards for shallow junction characterization. / Shimizu, Yasuo; Takano, Akio; Itoh, Kohei M.

In: Applied Surface Science, Vol. 255, No. 4, 15.12.2008, p. 1345-1347.

Research output: Contribution to journalArticle

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