Silicon Isotope Technology for Quantum Computing

Satoru Miyamoto, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using a standard silicon CMOS integration technology. Our Si-28 quantum-wells are well-strained and demonstrate high electron mobility and large valley-splitting. These properties provide promising platforms for realization of highly integrated spin qubits working together with silicon CMOS circuits.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6.4.1-6.4.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18/12/118/12/5

Fingerprint

silicon isotopes
Silicon
quantum computation
Isotopes
CMOS
silicon
Quantum computers
quantum computers
Electron mobility
electron mobility
Semiconductor quantum wells
valleys
Heterojunctions
platforms
quantum wells
Networks (circuits)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Miyamoto, S., & Itoh, K. M. (2019). Silicon Isotope Technology for Quantum Computing. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 6.4.1-6.4.4). [8614609] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614609

Silicon Isotope Technology for Quantum Computing. / Miyamoto, Satoru; Itoh, Kohei M.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 6.4.1-6.4.4 8614609 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyamoto, S & Itoh, KM 2019, Silicon Isotope Technology for Quantum Computing. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614609, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 6.4.1-6.4.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 18/12/1. https://doi.org/10.1109/IEDM.2018.8614609
Miyamoto S, Itoh KM. Silicon Isotope Technology for Quantum Computing. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 6.4.1-6.4.4. 8614609. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2018.8614609
Miyamoto, Satoru ; Itoh, Kohei M. / Silicon Isotope Technology for Quantum Computing. 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 6.4.1-6.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).
@inproceedings{df121b060382481cbb52d124e2bf082f,
title = "Silicon Isotope Technology for Quantum Computing",
abstract = "We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using a standard silicon CMOS integration technology. Our Si-28 quantum-wells are well-strained and demonstrate high electron mobility and large valley-splitting. These properties provide promising platforms for realization of highly integrated spin qubits working together with silicon CMOS circuits.",
author = "Satoru Miyamoto and Itoh, {Kohei M}",
year = "2019",
month = "1",
day = "16",
doi = "10.1109/IEDM.2018.8614609",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6.4.1--6.4.4",
booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

}

TY - GEN

T1 - Silicon Isotope Technology for Quantum Computing

AU - Miyamoto, Satoru

AU - Itoh, Kohei M

PY - 2019/1/16

Y1 - 2019/1/16

N2 - We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using a standard silicon CMOS integration technology. Our Si-28 quantum-wells are well-strained and demonstrate high electron mobility and large valley-splitting. These properties provide promising platforms for realization of highly integrated spin qubits working together with silicon CMOS circuits.

AB - We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using a standard silicon CMOS integration technology. Our Si-28 quantum-wells are well-strained and demonstrate high electron mobility and large valley-splitting. These properties provide promising platforms for realization of highly integrated spin qubits working together with silicon CMOS circuits.

UR - http://www.scopus.com/inward/record.url?scp=85061826605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061826605&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2018.8614609

DO - 10.1109/IEDM.2018.8614609

M3 - Conference contribution

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 6.4.1-6.4.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -