Silicon single-electron memory & logic devices for room temperature operation

Junji Koga, Ryuji Ohba, Ken Uchida, Akira Toriumi

Research output: Contribution to journalConference article

Abstract

Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2001 Dec 1
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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