Silicon single-electron memory & logic devices for room temperature operation

Junji Koga, Ryuji Ohba, Ken Uchida, Akira Toriumi

    Research output: Contribution to journalConference article

    9 Citations (Scopus)

    Abstract

    Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.

    Original languageEnglish
    Pages (from-to)143-146
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    Publication statusPublished - 2001 Dec 1
    EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
    Duration: 2001 Dec 22001 Dec 5

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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