Silicon single-electron tunnelling device interfaced with a CMOS inverter

K. Uchida, J. Koga, A. Ohata, A. Toriumi

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    A silicon single-electron tunnelling (SET) device with an oxidation-controlled narrow channel was fabricated on a silicon-on-insulator substrate. Measurements at liquid helium temperature show the clear Coulomb blockade effects. The Coulomb oscillations of the SET device are successfully transformed to voltage oscillations by combining it with an nMOSFET load. In addition, it is demonstrated that the obtained small voltage signals are amplified with a CMOS inverter operating at room temperature. These results constitute an important step toward the future hybrid Si ULSIs of SET and CMOS devices.

    Original languageEnglish
    Pages (from-to)198-200
    Number of pages3
    JournalNanotechnology
    Volume10
    Issue number2
    DOIs
    Publication statusPublished - 1999 Jun 1

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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