Silicon single-electron tunnelling device interfaced with a CMOS inverter

K. Uchida, J. Koga, A. Ohata, A. Toriumi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A silicon single-electron tunnelling (SET) device with an oxidation-controlled narrow channel was fabricated on a silicon-on-insulator substrate. Measurements at liquid helium temperature show the clear Coulomb blockade effects. The Coulomb oscillations of the SET device are successfully transformed to voltage oscillations by combining it with an nMOSFET load. In addition, it is demonstrated that the obtained small voltage signals are amplified with a CMOS inverter operating at room temperature. These results constitute an important step toward the future hybrid Si ULSIs of SET and CMOS devices.

Original languageEnglish
Pages (from-to)198-200
Number of pages3
JournalNanotechnology
Volume10
Issue number2
DOIs
Publication statusPublished - 1999 Jun 1

    Fingerprint

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this