Simulation of correlated diffusion of Si and B in thermally grown SiO 2

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi

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Abstract

Simultaneous diffusion of Si and B in thermally grown SiO2 is modeled taking into account the effect of SiO molecules generated at the Si/SiO2 interface and diffusing into SiO2 to enhance both Si and B diffusion. Based on the model, we simulated experimental profiles of coimplanted 30Si and B in 28SiO2, which showed increasing diffusivities with decreasing distance from the interface. The simulation results show that the SiO diffusion is so slow that the SiO concentration at the near-surface region critically depends on the distance from the interface. In addition, the simulation explains that the diffusivities of both Si and B increase with longer annealing times because more SiO molecules arrive from the interface. Furthermore, we examined the effect of high-concentration B on the diffusivities of Si and B in SiO2, both of which increase with higher B concentration. The experimental results were simulated assuming that the diffusivity of SiO, which enhances the diffusivities of Si and B, increases with higher B concentration. The present results indicate that Si and B diffusion in SiO2 are correlated via SiO molecules; namely, the enhancement of SiO diffusion at high B concentrations also causes enhanced diffusion of both Si and B.

Original languageEnglish
Pages (from-to)5513-5519
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number10
DOIs
Publication statusPublished - 2004 Nov 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Uematsu, M., Kageshima, H., Takahashi, Y., Fukatsu, S., Itoh, K. M., & Shiraishi, K. (2004). Simulation of correlated diffusion of Si and B in thermally grown SiO 2. Journal of Applied Physics, 96(10), 5513-5519. https://doi.org/10.1063/1.1806253