SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE.

K. Tomizawa, Yuji Awano, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Two-dimensional Monte Carlo simulation of a 0. 25 mu m-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 multiplied by 10**7 (cm/s) in the channel, and extremely high values of I//d equals 11 (mA/20 mu m) and g//m equals 1250 (mS/mm) are obtained. The unity-current-gain frequency f//T is found to reach about 250 GHz.

Original languageEnglish
Pages (from-to)697-698
Number of pages2
JournalElectronics Letters
Volume19
Issue number17
Publication statusPublished - 1983 Jan 1
Externally publishedYes

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Electron injection
Hot electrons
Field effect transistors
Heterojunctions
Electrons
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tomizawa, K., Awano, Y., Hashizume, N., & Kawashima, M. (1983). SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE. Electronics Letters, 19(17), 697-698.

SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE. / Tomizawa, K.; Awano, Yuji; Hashizume, N.; Kawashima, M.

In: Electronics Letters, Vol. 19, No. 17, 01.01.1983, p. 697-698.

Research output: Contribution to journalArticle

Tomizawa, K, Awano, Y, Hashizume, N & Kawashima, M 1983, 'SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE.', Electronics Letters, vol. 19, no. 17, pp. 697-698.
Tomizawa K, Awano Y, Hashizume N, Kawashima M. SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE. Electronics Letters. 1983 Jan 1;19(17):697-698.
Tomizawa, K. ; Awano, Yuji ; Hashizume, N. ; Kawashima, M. / SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE. In: Electronics Letters. 1983 ; Vol. 19, No. 17. pp. 697-698.
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