Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

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    14 Citations (Scopus)

    Abstract

    Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

    Original languageEnglish
    Pages (from-to)697-698
    Number of pages2
    JournalElectronics Letters
    Volume19
    Issue number17
    DOIs
    Publication statusPublished - 1983 Aug 18

    Keywords

    • Field-effect transistors
    • Semiconductor devices and materials
    • Simulation

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Tomizawa, K., Awano, Y., Hashizume, N., & Kawashima, M. (1983). Simulation of GaAs submicron FET with hot-electron injection structure. Electronics Letters, 19(17), 697-698. https://doi.org/10.1049/el:19830475