Abstract
Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.
Original language | English |
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Pages (from-to) | 697-698 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 19 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1983 Aug 18 |
Keywords
- Field-effect transistors
- Semiconductor devices and materials
- Simulation
ASJC Scopus subject areas
- Electrical and Electronic Engineering