Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa; Y. Awano; N. Hashizume; M. Kawashima

doi:10.1049/el:19830475

Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 10⁷ (cm/s) in the channel, and extremely high values of I_d = 11 (mA/20 μm) and g_m = 1250 (mS/mm) are obtained. The unity-current-gain frequency f_T is found to reach about 250 GHz.

Original language	English
Pages (from-to)	697-698
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	17
DOIs	https://doi.org/10.1049/el:19830475
Publication status	Published - 1983 Aug 18

Keywords

Field-effect transistors
Semiconductor devices and materials
Simulation

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19830475

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Tomizawa, K., Awano, Y., Hashizume, N., & Kawashima, M. (1983). Simulation of GaAs submicron FET with hot-electron injection structure. Electronics Letters, 19(17), 697-698. https://doi.org/10.1049/el:19830475

@article{89a36831484e4fd9a55955d42ff9e64f,

title = "Simulation of GaAs submicron FET with hot-electron injection structure",

abstract = "Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.",

keywords = "Field-effect transistors, Semiconductor devices and materials, Simulation",

author = "K. Tomizawa and Y. Awano and N. Hashizume and M. Kawashima",

year = "1983",

month = aug,

day = "18",

doi = "10.1049/el:19830475",

language = "English",

volume = "19",

pages = "697--698",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "17",

}

TY - JOUR

T1 - Simulation of GaAs submicron FET with hot-electron injection structure

AU - Tomizawa, K.

AU - Awano, Y.

AU - Hashizume, N.

AU - Kawashima, M.

PY - 1983/8/18

Y1 - 1983/8/18

N2 - Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

AB - Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

KW - Field-effect transistors

KW - Semiconductor devices and materials

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=0020802827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020802827&partnerID=8YFLogxK

U2 - 10.1049/el:19830475

DO - 10.1049/el:19830475

M3 - Article

AN - SCOPUS:0020802827

VL - 19

SP - 697

EP - 698

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 17

ER -