Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)


    Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

    Original languageEnglish
    Pages (from-to)697-698
    Number of pages2
    JournalElectronics Letters
    Issue number17
    Publication statusPublished - 1983 Aug 18


    • Field-effect transistors
    • Semiconductor devices and materials
    • Simulation

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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