Abstract
Two-dimensional Monte Carlo simulation of a 0. 25 mu m-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 multiplied by 10**7 (cm/s) in the channel, and extremely high values of I//d equals 11 (mA/20 mu m) and g//m equals 1250 (mS/mm) are obtained. The unity-current-gain frequency f//T is found to reach about 250 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 697-698 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 19 |
| Issue number | 17 |
| Publication status | Published - 1983 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE. / Tomizawa, K.; Awano, Yuji; Hashizume, N.; Kawashima, M.
In: Electronics Letters, Vol. 19, No. 17, 01.01.1983, p. 697-698.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - SIMULATION OF GaAs SUBMICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE.
AU - Tomizawa, K.
AU - Awano, Yuji
AU - Hashizume, N.
AU - Kawashima, M.
PY - 1983/1/1
Y1 - 1983/1/1
N2 - Two-dimensional Monte Carlo simulation of a 0. 25 mu m-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 multiplied by 10**7 (cm/s) in the channel, and extremely high values of I//d equals 11 (mA/20 mu m) and g//m equals 1250 (mS/mm) are obtained. The unity-current-gain frequency f//T is found to reach about 250 GHz.
AB - Two-dimensional Monte Carlo simulation of a 0. 25 mu m-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 multiplied by 10**7 (cm/s) in the channel, and extremely high values of I//d equals 11 (mA/20 mu m) and g//m equals 1250 (mS/mm) are obtained. The unity-current-gain frequency f//T is found to reach about 250 GHz.
UR - http://www.scopus.com/inward/record.url?scp=0020802827&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020802827&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0020802827
VL - 19
SP - 697
EP - 698
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 17
ER -