SIMULATION OF NEAR BALLISTIC ELECTRON TRANSPORT IN A SUBMICRON GaAs DIODE WITH Al//xGa//1// minus //xAs/GaAs HETEROJUNCTION CATHODE.

K. Tomizawa, Yuji Awano, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an Al//xGa//1// minus //xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.

Original languageEnglish
Pages (from-to)37-41
Number of pages5
JournalIEE Proceedings I: Solid State and Electron Devices
Volume132
Issue number1 pt 1
Publication statusPublished - 1985 Feb
Externally publishedYes

Fingerprint

Ballistics
Diodes
Electrons
Electric fields
Electron injection
Hot electrons
Poisson equation
Carrier concentration
Heterojunctions
Cathodes
Boundary conditions
Electron Transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

SIMULATION OF NEAR BALLISTIC ELECTRON TRANSPORT IN A SUBMICRON GaAs DIODE WITH Al//xGa//1// minus //xAs/GaAs HETEROJUNCTION CATHODE. / Tomizawa, K.; Awano, Yuji; Hashizume, N.; Kawashima, M.

In: IEE Proceedings I: Solid State and Electron Devices, Vol. 132, No. 1 pt 1, 02.1985, p. 37-41.

Research output: Contribution to journalArticle

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