Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors

Masashi Uematsu, Kohei M. Itoh, Gennady Mil'Nikov, Hideki Minari, Nobuya Mori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We have theoretically investigated the effects of random discrete dopant (RDD) distribution on the device characteristics in silicon nanowire (NW) transistors by performing non-equilibrium Green's function simulation combined with kinetic Monte Carlo method for generating RDD distribution. We show that a small number of dopant atoms diffusing into the channel have a significant impact on the threshold voltage (Vth) variation. We examine the dependence of the Vth variation on RDD distribution and find that the fluctuation can be significantly reduced by introducing side-wall gate spacers. We also find that the on-current fluctuation is mainly caused by randomness of As dopants in the source and drain extensions and hence is inherent in ultra-small NW transistors.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages30.4.1-30.4.4
DOIs
Publication statusPublished - 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 2012 Dec 102012 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors'. Together they form a unique fingerprint.

Cite this