Simulation study of charge modulation in coupled quantum dots in silicon

Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.

Original languageEnglish
Article number04DJ05
JournalJapanese Journal of Applied Physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
Modulation
modulation
Silicon
Electrons
silicon
electrons
simulation
Electric potential
electric potential
Surface charge
electron states
Charge density
metal oxide semiconductors
Electron energy levels
Transistors
transistors
insulators
sensors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kambara, T., Kodera, T., Takahashi, T., Yamahata, G., Uchida, K., & Oda, S. (2011). Simulation study of charge modulation in coupled quantum dots in silicon. Japanese Journal of Applied Physics, 50(4 PART 2), [04DJ05]. https://doi.org/10.1143/JJAP.50.04DJ05

Simulation study of charge modulation in coupled quantum dots in silicon. / Kambara, Tomohiro; Kodera, Tetsuo; Takahashi, Tsunaki; Yamahata, Gento; Uchida, Ken; Oda, Shunri.

In: Japanese Journal of Applied Physics, Vol. 50, No. 4 PART 2, 04DJ05, 04.2011.

Research output: Contribution to journalArticle

Kambara, T, Kodera, T, Takahashi, T, Yamahata, G, Uchida, K & Oda, S 2011, 'Simulation study of charge modulation in coupled quantum dots in silicon', Japanese Journal of Applied Physics, vol. 50, no. 4 PART 2, 04DJ05. https://doi.org/10.1143/JJAP.50.04DJ05
Kambara T, Kodera T, Takahashi T, Yamahata G, Uchida K, Oda S. Simulation study of charge modulation in coupled quantum dots in silicon. Japanese Journal of Applied Physics. 2011 Apr;50(4 PART 2). 04DJ05. https://doi.org/10.1143/JJAP.50.04DJ05
Kambara, Tomohiro ; Kodera, Tetsuo ; Takahashi, Tsunaki ; Yamahata, Gento ; Uchida, Ken ; Oda, Shunri. / Simulation study of charge modulation in coupled quantum dots in silicon. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 4 PART 2.
@article{40b0d398df50406ba68f7eea1482d404,
title = "Simulation study of charge modulation in coupled quantum dots in silicon",
abstract = "We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.",
author = "Tomohiro Kambara and Tetsuo Kodera and Tsunaki Takahashi and Gento Yamahata and Ken Uchida and Shunri Oda",
year = "2011",
month = "4",
doi = "10.1143/JJAP.50.04DJ05",
language = "English",
volume = "50",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 PART 2",

}

TY - JOUR

T1 - Simulation study of charge modulation in coupled quantum dots in silicon

AU - Kambara, Tomohiro

AU - Kodera, Tetsuo

AU - Takahashi, Tsunaki

AU - Yamahata, Gento

AU - Uchida, Ken

AU - Oda, Shunri

PY - 2011/4

Y1 - 2011/4

N2 - We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.

AB - We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.

UR - http://www.scopus.com/inward/record.url?scp=79955446168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955446168&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.04DJ05

DO - 10.1143/JJAP.50.04DJ05

M3 - Article

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

M1 - 04DJ05

ER -