Simulation study of charge modulation in coupled quantum dots in silicon

Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda

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Abstract

We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.

Original languageEnglish
Article number04DJ05
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kambara, T., Kodera, T., Takahashi, T., Yamahata, G., Uchida, K., & Oda, S. (2011). Simulation study of charge modulation in coupled quantum dots in silicon. Japanese journal of applied physics, 50(4 PART 2), [04DJ05]. https://doi.org/10.1143/JJAP.50.04DJ05