Simulations of Schottky barrier diodes and tunnel transistors

K. Matsuzawa, K. Uchida, A. Nishiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.

Original languageEnglish
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages163-165
Number of pages3
ISBN (Electronic)0780343697, 9780780343696
DOIs
Publication statusPublished - 1998 Jan 1
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: 1998 Oct 191998 Oct 21

Publication series

NameExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Volume1998-October

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period98/10/1998/10/21

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ASJC Scopus subject areas

  • Modelling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

Cite this

Matsuzawa, K., Uchida, K., & Nishiyama, A. (1998). Simulations of Schottky barrier diodes and tunnel transistors. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (pp. 163-165). [742737] (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998; Vol. 1998-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742737