Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices

Yasuo Shimizu, Akio Takano, Masashi Uematsu, Kohei M Itoh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The behavior of impurity (arsenic or boron) and silicon host atoms during ion implantation was investigated using silicon isotope superlattices. The depth profiles of silicon isotopes in the 28Si/30Si isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. The experimentally determined profiles were reproduced very well by a theoretical model to yield the average displacement of silicon atoms as a function of the depth. The critical displacement of silicon to induce the amorphous layer was determined together with cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)597-599
Number of pages3
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

Fingerprint

silicon isotopes
Superlattices
Silicon
Isotopes
superlattices
Impurities
impurities
Atoms
ion implantation
silicon
atoms
Ion implantation
profiles
arsenic
secondary ion mass spectrometry
boron
isotopes
Boron
Arsenic
Secondary ion mass spectrometry

Keywords

  • Defects
  • Diffusion
  • Impurities
  • Isotopes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices. / Shimizu, Yasuo; Takano, Akio; Uematsu, Masashi; Itoh, Kohei M.

In: Physica B: Condensed Matter, Vol. 401-402, 15.12.2007, p. 597-599.

Research output: Contribution to journalArticle

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AB - The behavior of impurity (arsenic or boron) and silicon host atoms during ion implantation was investigated using silicon isotope superlattices. The depth profiles of silicon isotopes in the 28Si/30Si isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. The experimentally determined profiles were reproduced very well by a theoretical model to yield the average displacement of silicon atoms as a function of the depth. The critical displacement of silicon to induce the amorphous layer was determined together with cross-sectional transmission electron microscopy.

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