Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures

Masashi Uematsu, Kota Matsubara, Kohei M Itoh

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3 Citations (Scopus)

Abstract

Diffusion of self-atoms and co-implanted carbon (C) and boron (B) in silicon (Si) has been simultaneously observed using natSi/28Si isotope heterostructures. The supersaturation of Si self-interstitials (I's) is investigated through the 30Si diffusion. The experimental results showed that Si self-diffusion was enhanced, that is, the I is more severely supersaturated, while B diffusion near the kink region was reduced with higher C dose. We also found slower dissolution of immobile BI clusters. C diffusion was not significant, indicating the formation of immobile CI clusters. These results indicate that the reduction of B diffusion is not due to the trapping of I by C, if any, but due to the retardation of BI cluster dissolution by the presence of C to decrease the amount of mobile B. The Si self-diffusion is enhanced by the dissolution of CI clusters to emit I.

Original languageEnglish
Article number071302
JournalJapanese Journal of Applied Physics
Volume53
Issue number7
DOIs
Publication statusPublished - 2014

Fingerprint

Isotopes
Boron
Heterojunctions
boron
isotopes
Silicon
Atoms
Carbon
carbon
silicon
dissolving
atoms
Dissolution
supersaturation
interstitials
Supersaturation
trapping
dosage

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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AU - Matsubara, Kota

AU - Itoh, Kohei M

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