Single atom calculation in silicon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Logic operations using single dopants in silicon are discussed. Among many shallow donors, substitutionally placed phosphorus donors have been playing the major roles in development of single-atom calculation in silicon. This presentation describes the current status and future outlook of electronics based on single atomic calculation in silicon.

Original languageEnglish
Title of host publicationIMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai
Pages18-19
Number of pages2
DOIs
Publication statusPublished - 2011
Event9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011 - Osaka, Japan
Duration: 2011 May 192011 May 20

Other

Other9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011
CountryJapan
CityOsaka
Period11/5/1911/5/20

Fingerprint

Silicon
Atoms
Phosphorus
Electronic equipment
Doping (additives)

Keywords

  • component
  • phoshorus donors
  • quantum calculation
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Itoh, K. M. (2011). Single atom calculation in silicon. In IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai (pp. 18-19). [5944823] https://doi.org/10.1109/IMFEDK.2011.5944823

Single atom calculation in silicon. / Itoh, Kohei M.

IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai. 2011. p. 18-19 5944823.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Itoh, KM 2011, Single atom calculation in silicon. in IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai., 5944823, pp. 18-19, 9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011, Osaka, Japan, 11/5/19. https://doi.org/10.1109/IMFEDK.2011.5944823
Itoh KM. Single atom calculation in silicon. In IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai. 2011. p. 18-19. 5944823 https://doi.org/10.1109/IMFEDK.2011.5944823
Itoh, Kohei M. / Single atom calculation in silicon. IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai. 2011. pp. 18-19
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