Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto, Seizo Kinoshita, Yoshitaka Gotoh, Kousuke Kurachi, Takahumi Kamimura, Masatoshi Maeda, Kazue Sakamoto, Masashi Kuwahara, Nobuhumi Atoda, Yuji Awano

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

Original languageEnglish
Pages (from-to)2415-2418
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
Publication statusPublished - 2003 Apr
Externally publishedYes

Keywords

  • Carbon nanotube
  • Coulomb diamond
  • Defect
  • Room temperature
  • Single electron transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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