Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto, Seizo Kinoshita, Yoshitaka Gotoh, Kousuke Kurachi, Takahumi Kamimura, Masatoshi Maeda, Kazue Sakamoto, Masashi Kuwahara, Nobuhumi Atoda, Yuji Awano

    Research output: Contribution to journalArticle

    56 Citations (Scopus)

    Abstract

    Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

    Original languageEnglish
    Pages (from-to)2415-2418
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume42
    Issue number4 B
    DOIs
    Publication statusPublished - 2003 Apr

    Keywords

    • Carbon nanotube
    • Coulomb diamond
    • Defect
    • Room temperature
    • Single electron transistor

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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