Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto, Seizo Kinoshita, Yoshitaka Gotoh, Kousuke Kurachi, Takahumi Kamimura, Masatoshi Maeda, Kazue Sakamoto, Masashi Kuwahara, Nobuhumi Atoda, Yuji Awano

Research output: Contribution to journal › Article

56 Citations (Scopus)

Abstract

Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

Original languageEnglish
Pages (from-to)2415-2418
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
Publication statusPublished - 2003 Apr
Externally publishedYes

Fingerprint

Single electron transistors
single electron transistors
Carbon nanotubes
carbon nanotubes
Semiconductor quantum dots
energy
Diamonds
diamonds
quantum dots
catalysts
Defects
Catalysts
defects
room temperature
Temperature

Keywords

  • Carbon nanotube
  • Coulomb diamond
  • Defect
  • Room temperature
  • Single electron transistor

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. / Matsumoto, Kazuhiko; Kinoshita, Seizo; Gotoh, Yoshitaka; Kurachi, Kousuke; Kamimura, Takahumi; Maeda, Masatoshi; Sakamoto, Kazue; Kuwahara, Masashi; Atoda, Nobuhumi; Awano, Yuji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 04.2003, p. 2415-2418.

Research output: Contribution to journal › Article

Matsumoto, K, Kinoshita, S, Gotoh, Y, Kurachi, K, Kamimura, T, Maeda, M, Sakamoto, K, Kuwahara, M, Atoda, N & Awano, Y 2003, 'Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 4 B, pp. 2415-2418.
Matsumoto K, Kinoshita S, Gotoh Y, Kurachi K, Kamimura T, Maeda M et al. Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 Apr;42(4 B):2415-2418.
Matsumoto, Kazuhiko ; Kinoshita, Seizo ; Gotoh, Yoshitaka ; Kurachi, Kousuke ; Kamimura, Takahumi ; Maeda, Masatoshi ; Sakamoto, Kazue ; Kuwahara, Masashi ; Atoda, Nobuhumi ; Awano, Yuji. / Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 4 B. pp. 2415-2418.
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AU - Kamimura, Takahumi

AU - Maeda, Masatoshi

AU - Sakamoto, Kazue

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AU - Awano, Yuji

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