Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto; Seizo Kinoshita; Yoshitaka Gotoh; Kousuke Kurachi; Takahumi Kamimura; Masatoshi Maeda; Kazue Sakamoto; Masashi Kuwahara; Nobuhumi Atoda; Yuji Awano

doi:10.1143/jjap.42.2415

Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto, Seizo Kinoshita, Yoshitaka Gotoh, Kousuke Kurachi, Takahumi Kamimura, Masatoshi Maeda, Kazue Sakamoto, Masashi Kuwahara, Nobuhumi Atoda, Yuji Awano

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

Original language	English
Pages (from-to)	2415-2418
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.2415
Publication status	Published - 2003 Apr

Keywords

Carbon nanotube
Coulomb diamond
Defect
Room temperature
Single electron transistor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.42.2415

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Matsumoto, K., Kinoshita, S., Gotoh, Y., Kurachi, K., Kamimura, T., Maeda, M., Sakamoto, K., Kuwahara, M., Atoda, N., & Awano, Y. (2003). Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(4 B), 2415-2418. https://doi.org/10.1143/jjap.42.2415

Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. / Matsumoto, Kazuhiko; Kinoshita, Seizo; Gotoh, Yoshitaka; Kurachi, Kousuke; Kamimura, Takahumi; Maeda, Masatoshi; Sakamoto, Kazue; Kuwahara, Masashi; Atoda, Nobuhumi; Awano, Yuji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 04.2003, p. 2415-2418.

Research output: Contribution to journal › Article › peer-review

Matsumoto, K, Kinoshita, S, Gotoh, Y, Kurachi, K, Kamimura, T, Maeda, M, Sakamoto, K, Kuwahara, M, Atoda, N & Awano, Y 2003, 'Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 4 B, pp. 2415-2418. https://doi.org/10.1143/jjap.42.2415

Matsumoto, Kazuhiko ; Kinoshita, Seizo ; Gotoh, Yoshitaka ; Kurachi, Kousuke ; Kamimura, Takahumi ; Maeda, Masatoshi ; Sakamoto, Kazue ; Kuwahara, Masashi ; Atoda, Nobuhumi ; Awano, Yuji. / Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 4 B. pp. 2415-2418.

@article{9e3031940adc42bfbe9bf85c54e56e4e,

title = "Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel",

abstract = "Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.",

keywords = "Carbon nanotube, Coulomb diamond, Defect, Room temperature, Single electron transistor",

author = "Kazuhiko Matsumoto and Seizo Kinoshita and Yoshitaka Gotoh and Kousuke Kurachi and Takahumi Kamimura and Masatoshi Maeda and Kazue Sakamoto and Masashi Kuwahara and Nobuhumi Atoda and Yuji Awano",

year = "2003",

month = apr,

doi = "10.1143/jjap.42.2415",

language = "English",

volume = "42",

pages = "2415--2418",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

AU - Matsumoto, Kazuhiko

AU - Kinoshita, Seizo

AU - Gotoh, Yoshitaka

AU - Kurachi, Kousuke

AU - Kamimura, Takahumi

AU - Maeda, Masatoshi

AU - Sakamoto, Kazue

AU - Kuwahara, Masashi

AU - Atoda, Nobuhumi

AU - Awano, Yuji

PY - 2003/4

Y1 - 2003/4

N2 - Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

AB - Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

KW - Carbon nanotube

KW - Coulomb diamond

KW - Defect

KW - Room temperature

KW - Single electron transistor

UR - http://www.scopus.com/inward/record.url?scp=18344419255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18344419255&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.2415

DO - 10.1143/jjap.42.2415

M3 - Article

AN - SCOPUS:18344419255

VL - 42

SP - 2415

EP - 2418

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -