Abstract
Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.
Original language | English |
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Pages (from-to) | 2415-2418 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2003 Apr |
Externally published | Yes |
Keywords
- Carbon nanotube
- Coulomb diamond
- Defect
- Room temperature
- Single electron transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)