Single-photon emission from highly uniform site-controlled semiconductor quantum dots

M. Baier, S. Watanabe, E. Pelucchi, E. Kapon, S. Varoutsis, M. Gallart, I. Robert-Philip, I. Abram

Research output: Contribution to conferencePaper

Abstract

We observed anti-bunching of photons emitted from (In)GaAs/AlGaAs quantum dots grown on pyramidal recess patterns. The control on dot position, photon energy (1.43-1.65eV) and small inhomogeneous broadening (10meV) make them useful in practical single-photon emitters.

Original languageEnglish
PagesQTuK1/1-QTuK1/2
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: 2003 Jun 12003 Jun 6

Other

OtherTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
CountryUnited States
CityBaltimore, MD.
Period03/6/103/6/6

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Single-photon emission from highly uniform site-controlled semiconductor quantum dots'. Together they form a unique fingerprint.

  • Cite this

    Baier, M., Watanabe, S., Pelucchi, E., Kapon, E., Varoutsis, S., Gallart, M., Robert-Philip, I., & Abram, I. (2003). Single-photon emission from highly uniform site-controlled semiconductor quantum dots. QTuK1/1-QTuK1/2. Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.