Site selective growth of Ge quantum dots on AFM-patterned Si substrates

A. Hirai; K. M. Itoh

doi:10.1016/j.physe.2003.12.130

Site selective growth of Ge quantum dots on AFM-patterned Si substrates

A. Hirai, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.

Original language	English
Pages (from-to)	248-252
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	23
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2003.12.130
Publication status	Published - 2004 Jul
Event	Proceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany Duration: 2003 Oct 13 → 2003 Oct 15

Keywords

Atomic force microscopy
Ge quantum dot
Nano lithography
Nano oxidation
Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.12.130

Cite this

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title = "Site selective growth of Ge quantum dots on AFM-patterned Si substrates",

abstract = "By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.",

keywords = "Atomic force microscopy, Ge quantum dot, Nano lithography, Nano oxidation, Si",

author = "A. Hirai and Itoh, {K. M.}",

note = "Funding Information: We would like to thank H.Z. Song, T. Ohshima, and Y. Okada for their advices on AFM nanooxidation and the technical staff of the Central Service Facilities for Research at Keio University for the assistance with AFM. The work is supported in part by the Fujitsu Laboratories and in part by a Grant-in-Aid for Scientific Research in Priority Areas “Semiconductor Nanospintronics (♯14076215).”; Proceedings of the Fifth International Workshop on Expitaxial ; Conference date: 13-10-2003 Through 15-10-2003",

year = "2004",

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doi = "10.1016/j.physe.2003.12.130",

language = "English",

volume = "23",

pages = "248--252",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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number = "3-4 SPEC. ISS.",

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TY - JOUR

T1 - Site selective growth of Ge quantum dots on AFM-patterned Si substrates

AU - Hirai, A.

AU - Itoh, K. M.

N1 - Funding Information: We would like to thank H.Z. Song, T. Ohshima, and Y. Okada for their advices on AFM nanooxidation and the technical staff of the Central Service Facilities for Research at Keio University for the assistance with AFM. The work is supported in part by the Fujitsu Laboratories and in part by a Grant-in-Aid for Scientific Research in Priority Areas “Semiconductor Nanospintronics (♯14076215).”

PY - 2004/7

Y1 - 2004/7

N2 - By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.

AB - By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.

KW - Atomic force microscopy

KW - Ge quantum dot

KW - Nano lithography

KW - Nano oxidation

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=3142762318&partnerID=8YFLogxK

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U2 - 10.1016/j.physe.2003.12.130

DO - 10.1016/j.physe.2003.12.130

M3 - Conference article

AN - SCOPUS:3142762318

SN - 1386-9477

VL - 23

SP - 248

EP - 252

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4 SPEC. ISS.

T2 - Proceedings of the Fifth International Workshop on Expitaxial

Y2 - 13 October 2003 through 15 October 2003

ER -

Site selective growth of Ge quantum dots on AFM-patterned Si substrates

Abstract

Keywords

ASJC Scopus subject areas

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