Site selective growth of Ge quantum dots on AFM-patterned Si substrates

A. Hirai, Kohei M Itoh

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.

Original languageEnglish
Pages (from-to)248-252
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume23
Issue number3-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Jul

Fingerprint

Anodic oxidation
Molecular beam epitaxy
Semiconductor quantum dots
Etching
Microscopes
microscopes
quantum dots
Atoms
Substrates
etching
oxidation
atoms

Keywords

  • Atomic force microscopy
  • Ge quantum dot
  • Nano lithography
  • Nano oxidation
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Site selective growth of Ge quantum dots on AFM-patterned Si substrates. / Hirai, A.; Itoh, Kohei M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 23, No. 3-4 SPEC. ISS., 07.2004, p. 248-252.

Research output: Contribution to journalArticle

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